Clustering in the approach to the metal-insulator transition

R. N. Bhatt, T. M. Rice

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

A phenomenological model of donor clusters is found to describe the optical and magnetic properties well at donor densities below the Mott density. The effects of clustering on the single-particle density of states is discussed. Microscopic calculations lead to the conclusion that in multi-valley semiconductors large clusters are sufficiently electronegative to attract an electron from isolated donors or donor pairs and as a result, there is no Mott-Hubbard gap due to correlation. The insulating property is ascribed to' Anderson localization at the Fermi level.

Original languageEnglish (US)
Pages (from-to)859-872
Number of pages14
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume42
Issue number6
DOIs
StatePublished - Dec 1980
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemical Engineering
  • General Physics and Astronomy

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