Cleaved-edge overgrowth of aligned quantum dots on strained layers of InGaAs

D. Wasserman; S. A. Lyon

doi:10.1063/1.1827351

Cleaved-edge overgrowth of aligned quantum dots on strained layers of InGaAs

D. Wasserman, S. A. Lyon

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Strain aligned InAs quantum dots were grown on the cleaved edges of first growth samples containing strained In _xGa _(1-x)As layers of varying thickness and indium fraction. The formation of the cleaved-edge quantum dots was observed by means of atomic force microscopy. 100% linear alignment of InAs quantum dots over the InGaAs strain layers of the first growth sample is demonstrated. Linear density of the aligned dots was found to depend on the properties of the underlying InGaAs strain layers. Vertical alignment of an additional InAs quantum dot layer over the buried, linearly aligned, initial dot layer was observed for thin GaAs spacer layers.

Original language	English (US)
Article number	3
Pages (from-to)	5352-5354
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	22
DOIs	https://doi.org/10.1063/1.1827351
State	Published - Nov 29 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1827351

Cite this

@article{b4c18be537b54692803853db1044f82e,

title = "Cleaved-edge overgrowth of aligned quantum dots on strained layers of InGaAs",

abstract = "Strain aligned InAs quantum dots were grown on the cleaved edges of first growth samples containing strained In xGa (1-x)As layers of varying thickness and indium fraction. The formation of the cleaved-edge quantum dots was observed by means of atomic force microscopy. 100% linear alignment of InAs quantum dots over the InGaAs strain layers of the first growth sample is demonstrated. Linear density of the aligned dots was found to depend on the properties of the underlying InGaAs strain layers. Vertical alignment of an additional InAs quantum dot layer over the buried, linearly aligned, initial dot layer was observed for thin GaAs spacer layers.",

author = "D. Wasserman and Lyon, {S. A.}",

note = "Funding Information: D.W. was supported by a National Science Foundation Graduate Research Fellowship. This work was supported in part by the U.S. Army Research Office under Grant No. DAAG55-98-1-0270.",

year = "2004",

month = nov,

day = "29",

doi = "10.1063/1.1827351",

language = "English (US)",

volume = "85",

pages = "5352--5354",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Cleaved-edge overgrowth of aligned quantum dots on strained layers of InGaAs

AU - Wasserman, D.

AU - Lyon, S. A.

N1 - Funding Information: D.W. was supported by a National Science Foundation Graduate Research Fellowship. This work was supported in part by the U.S. Army Research Office under Grant No. DAAG55-98-1-0270.

PY - 2004/11/29

Y1 - 2004/11/29

N2 - Strain aligned InAs quantum dots were grown on the cleaved edges of first growth samples containing strained In xGa (1-x)As layers of varying thickness and indium fraction. The formation of the cleaved-edge quantum dots was observed by means of atomic force microscopy. 100% linear alignment of InAs quantum dots over the InGaAs strain layers of the first growth sample is demonstrated. Linear density of the aligned dots was found to depend on the properties of the underlying InGaAs strain layers. Vertical alignment of an additional InAs quantum dot layer over the buried, linearly aligned, initial dot layer was observed for thin GaAs spacer layers.

AB - Strain aligned InAs quantum dots were grown on the cleaved edges of first growth samples containing strained In xGa (1-x)As layers of varying thickness and indium fraction. The formation of the cleaved-edge quantum dots was observed by means of atomic force microscopy. 100% linear alignment of InAs quantum dots over the InGaAs strain layers of the first growth sample is demonstrated. Linear density of the aligned dots was found to depend on the properties of the underlying InGaAs strain layers. Vertical alignment of an additional InAs quantum dot layer over the buried, linearly aligned, initial dot layer was observed for thin GaAs spacer layers.

UR - http://www.scopus.com/inward/record.url?scp=11044237542&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11044237542&partnerID=8YFLogxK

U2 - 10.1063/1.1827351

DO - 10.1063/1.1827351

M3 - Article

AN - SCOPUS:11044237542

SN - 0003-6951

VL - 85

SP - 5352

EP - 5354

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 3

ER -

Cleaved-edge overgrowth of aligned quantum dots on strained layers of InGaAs

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this