@article{c9d941b3680a47939b7d1fb1aa7563e9,
title = "Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon",
abstract = "We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate gc/2π= 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.",
author = "X. Mi and Cady, {J. V.} and Zajac, {D. M.} and J. Stehlik and Edge, {L. F.} and Petta, {J. R.}",
note = "Funding Information: We acknowledge valuable discussions with T. M. Hazard, Y.-Y. Liu, and S. Putz and thank J. Kerckhoff for suggesting the LC filters. Research was sponsored by ARO grant W911NF-15-1-0149 and the National Science Foundation (DMR-1409556 and DMR-1420541). The views and conclusions contained in this Letter are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the United States Department of Defense or the U.S. Government. Devices were fabricated in the Princeton University Quantum Device Nanofabrication Laboratory. Publisher Copyright: {\textcopyright} 2017 Author(s).",
year = "2017",
month = jan,
day = "23",
doi = "10.1063/1.4974536",
language = "English (US)",
volume = "110",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",
}