Abstract
We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate gc/2π= 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.
Original language | English (US) |
---|---|
Article number | 043502 |
Journal | Applied Physics Letters |
Volume | 110 |
Issue number | 4 |
DOIs | |
State | Published - Jan 23 2017 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)