Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon

X. Mi, J. V. Cady, D. M. Zajac, J. Stehlik, L. F. Edge, J. R. Petta

Research output: Contribution to journalArticle

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Abstract

We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate gc/2π= 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.

Original languageEnglish (US)
Article number043502
JournalApplied Physics Letters
Volume110
Issue number4
DOIs
StatePublished - Jan 23 2017

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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