Chlorine etching for in-situ low-temperature silicon surface cleaning for epitaxy applications

K. H. Chung, J. C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Chlorine in a nitrogen ambient is used to clean silicon surfaces of impurities by etching a thin layer from the surface prior to silicon epitaxial growth. Silicon etch rates of 1-10 nm/min could be achieved for temperatures from 525°C to 575°C. The etching of a thin layer of silicon from the surface is also capable of removing phosphorus from the surface, which conventionally is difficult to remove. Smooth surfaces and high epitaxial quality after chlorine etching are also demonstrated.

Original languageEnglish (US)
Title of host publicationECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS
Subtitle of host publicationNew Materials, Processes and Equipment, 3
Pages401-407
Number of pages7
Edition1
DOIs
StatePublished - Dec 1 2007
EventInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting - Chicago, IL, United States
Duration: May 6 2007May 10 2007

Publication series

NameECS Transactions
Number1
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period5/6/075/10/07

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Chung, K. H., & Sturm, J. C. (2007). Chlorine etching for in-situ low-temperature silicon surface cleaning for epitaxy applications. In ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 (1 ed., pp. 401-407). (ECS Transactions; Vol. 6, No. 1). https://doi.org/10.1149/1.2727426