Chemistry at the Al- and Au-ZnSe(100) interfaces

W. Chen, Antoine Kahn, P. Soukiassian, P. S. Mangat, J. Gaines, C. Ponzoni, D. Olego

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Core-level synchrotron-radiation photoemission spectroscopy was performed to examine the chemistry at Al/ZnSe(100) and Au/ZnSe(100) interfaces. The ZnSe layers were grown by molecular-beam epitaxy and the (100) surfaces were prepared by Se decapping. The metals were deposited on both Se-rich (2×1) and Zn-rich c(2×2) surfaces. The Al/ZnSe interface was found to be highly reactive and dominated by the formation of AlxSey, while the Au/ZnSe interface remained mostly unreactive and atomically abrupt. The stabilized Fermi-level positions for Al and Au on ZnSe(100) are 2.1 and 1.1 eV above the valence-band maximum, independent of doping type and initial surface composition.

Original languageEnglish (US)
Pages (from-to)14265-14270
Number of pages6
JournalPhysical Review B
Volume51
Issue number20
DOIs
StatePublished - Jan 1 1995

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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