Chemically gated electronic structure of a superconducting doped topological insulator system

L. A. Wray, S. Xu, M. Neupane, A. V. Fedorov, Y. S. Hor, R. J. Cava, M. Z. Hasan

Research output: Contribution to journalConference article

6 Scopus citations

Abstract

Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator CuxBi2Se3 as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.

Original languageEnglish (US)
Article number012037
JournalJournal of Physics: Conference Series
Volume449
Issue number1
DOIs
StatePublished - 2013
Event10th International Conference on Materials and Mechanisms of Superconductivity, M2S 2012 - Washington, DC, United States
Duration: Jul 29 2012Aug 3 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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