TY - JOUR
T1 - CHEMICALLY DERIVATIZED SEMICONDUCTOR PHOTOELECTRODES - A TECHNIQUE FOR THE STABILIZATION OF n-TYPE SEMICONDUCTORS.
AU - Wrighton, Mark S.
AU - Bocarsly, Andrew Bruce
AU - Bolts, Jeffrey M.
AU - Bradley, Mark G.
AU - Fischer, Alan B.
AU - Lewis, Nathan S.
AU - Palazzotto, Michael C.
AU - Walton, Erick G.
PY - 1980
Y1 - 1980
N2 - Pretreated Au, Pt, n-type Si, and n-type Ge can be derivatized with trichlorosilylferrocene, (1,1 prime -ferrocenediyl)dichlorosilane, and 1,1 prime -bis(triethoxysilyl)ferrocene to yield electroactive, surface-attached, oligomeric ferrocene material. Derivatized, n-type semiconductors exhibit photoeffects expected for such an electrode material; irradiated derivatized n-type Si can be used to effect the oxidation of solution reductants by mediated electron transfer, unique proof for which comes from the semiconductor electrode that responds to two stimuli, light and potential. The sustained, mediated oxidation of Fe(CN)//6**4** minus in aqueous solution in an uphill sense by irradiation of derivatized n-type Si is possible whereas a naked n-type Si undergoes decomposition to SiO//x at a rate too fast to allow sustained energy conversion. This establishes the principle of manipulating interfacial charge-transfer kinetics for practical applications.
AB - Pretreated Au, Pt, n-type Si, and n-type Ge can be derivatized with trichlorosilylferrocene, (1,1 prime -ferrocenediyl)dichlorosilane, and 1,1 prime -bis(triethoxysilyl)ferrocene to yield electroactive, surface-attached, oligomeric ferrocene material. Derivatized, n-type semiconductors exhibit photoeffects expected for such an electrode material; irradiated derivatized n-type Si can be used to effect the oxidation of solution reductants by mediated electron transfer, unique proof for which comes from the semiconductor electrode that responds to two stimuli, light and potential. The sustained, mediated oxidation of Fe(CN)//6**4** minus in aqueous solution in an uphill sense by irradiation of derivatized n-type Si is possible whereas a naked n-type Si undergoes decomposition to SiO//x at a rate too fast to allow sustained energy conversion. This establishes the principle of manipulating interfacial charge-transfer kinetics for practical applications.
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U2 - 10.1021/ba-1980-0184.ch015
DO - 10.1021/ba-1980-0184.ch015
M3 - Conference article
AN - SCOPUS:0019111110
SN - 0065-2393
SP - 269
EP - 294
JO - Advances in Chemistry Series
JF - Advances in Chemistry Series
T2 - Adv Chem Ser 184, Interfacial Photoprocesses, Energy Convers and Synth. Based on Symp at the 176th Meet of the ACS
Y2 - 11 September 1978 through 13 September 1978
ER -