Pretreated Au, Pt, n-type Si, and n-type Ge can be derivatized with trichlorosilylferrocene, (1,1 prime -ferrocenediyl)dichlorosilane, and 1,1 prime -bis(triethoxysilyl)ferrocene to yield electroactive, surface-attached, oligomeric ferrocene material. Derivatized, n-type semiconductors exhibit photoeffects expected for such an electrode material; irradiated derivatized n-type Si can be used to effect the oxidation of solution reductants by mediated electron transfer, unique proof for which comes from the semiconductor electrode that responds to two stimuli, light and potential. The sustained, mediated oxidation of Fe(CN)//6**4** minus in aqueous solution in an uphill sense by irradiation of derivatized n-type Si is possible whereas a naked n-type Si undergoes decomposition to SiO//x at a rate too fast to allow sustained energy conversion. This establishes the principle of manipulating interfacial charge-transfer kinetics for practical applications.
|Original language||English (US)|
|Number of pages||26|
|Journal||Advances in Chemistry Series|
|State||Published - Jan 1 1980|
|Event||Adv Chem Ser 184, Interfacial Photoprocesses, Energy Convers and Synth. Based on Symp at the 176th Meet of the ACS - Miami Beach, FL, USA|
Duration: Sep 11 1978 → Sep 13 1978
All Science Journal Classification (ASJC) codes