Chemical vapor deposition epitaxy of silicon-based materials using neopentasilane

J. C. Sturm, K. H. Chung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Scopus citations

Abstract

Neopentasilane (Si5H12) has been used as a precursor for the chemical vapor deposition epitaxy of silicon and Si1-yC y alloys at temperatures from 550 to 700 °C. This paper summarizes the experimental findings of high growth rates of high quality epitaxy and planar films and then proposes mechanisms to support these observations. Concerted mechanisms, which can lead to growth without the usual requirement of open sites on an otherwise hydrogen covered surface are described as they relate to high -order silanes.

Original languageEnglish (US)
Title of host publicationECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publicationMaterials, Processing, and Devices
Pages799-805
Number of pages7
Edition10
DOIs
StatePublished - Dec 1 2008
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: Oct 12 2008Oct 17 2008

Publication series

NameECS Transactions
Number10
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/12/0810/17/08

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Sturm, J. C., & Chung, K. H. (2008). Chemical vapor deposition epitaxy of silicon-based materials using neopentasilane. In ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices (10 ed., pp. 799-805). (ECS Transactions; Vol. 16, No. 10). https://doi.org/10.1149/1.2986839