Chemical vapor deposition epitaxy of silicon-based materials using neopentasilane

J. C. Sturm; K. H. Chung

doi:10.1149/1.2986839

Chemical vapor deposition epitaxy of silicon-based materials using neopentasilane

J. C. Sturm, K. H. Chung

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

22 Scopus citations

Abstract

Neopentasilane (Si₅H₁₂) has been used as a precursor for the chemical vapor deposition epitaxy of silicon and Si_1-yC _y alloys at temperatures from 550 to 700 °C. This paper summarizes the experimental findings of high growth rates of high quality epitaxy and planar films and then proposes mechanisms to support these observations. Concerted mechanisms, which can lead to growth without the usual requirement of open sites on an otherwise hydrogen covered surface are described as they relate to high -order silanes.

Original language	English (US)
Title of host publication	ECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	799-805
Number of pages	7
Edition	10
ISBN (Print)	9781566776561
DOIs	https://doi.org/10.1149/1.2986839
State	Published - 2009
Event	3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States Duration: Oct 12 2008 → Oct 17 2008

Publication series

Name	ECS Transactions
Number	10
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	10/12/08 → 10/17/08

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/1.2986839

Cite this

@inproceedings{cd0c067c2a0c4dd6bf4aef7d7943efcf,

title = "Chemical vapor deposition epitaxy of silicon-based materials using neopentasilane",

abstract = "Neopentasilane (Si5H12) has been used as a precursor for the chemical vapor deposition epitaxy of silicon and Si1-yC y alloys at temperatures from 550 to 700 °C. This paper summarizes the experimental findings of high growth rates of high quality epitaxy and planar films and then proposes mechanisms to support these observations. Concerted mechanisms, which can lead to growth without the usual requirement of open sites on an otherwise hydrogen covered surface are described as they relate to high -order silanes.",

author = "Sturm, {J. C.} and Chung, {K. H.}",

year = "2009",

doi = "10.1149/1.2986839",

language = "English (US)",

isbn = "9781566776561",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "10",

pages = "799--805",

booktitle = "ECS Transactions - SiGe, Ge, and Related Compounds 3",

edition = "10",

note = "3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",

}

Sturm, JC & Chung, KH 2009, Chemical vapor deposition epitaxy of silicon-based materials using neopentasilane. in ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10 edn, ECS Transactions, no. 10, vol. 16, Electrochemical Society Inc., pp. 799-805, 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting, Honolulu, HI, United States, 10/12/08. https://doi.org/10.1149/1.2986839

Chemical vapor deposition epitaxy of silicon-based materials using neopentasilane. / Sturm, J. C.; Chung, K. H.
ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10. ed. Electrochemical Society Inc., 2009. p. 799-805 (ECS Transactions; Vol. 16, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Chemical vapor deposition epitaxy of silicon-based materials using neopentasilane

AU - Sturm, J. C.

AU - Chung, K. H.

PY - 2009

Y1 - 2009

N2 - Neopentasilane (Si5H12) has been used as a precursor for the chemical vapor deposition epitaxy of silicon and Si1-yC y alloys at temperatures from 550 to 700 °C. This paper summarizes the experimental findings of high growth rates of high quality epitaxy and planar films and then proposes mechanisms to support these observations. Concerted mechanisms, which can lead to growth without the usual requirement of open sites on an otherwise hydrogen covered surface are described as they relate to high -order silanes.

AB - Neopentasilane (Si5H12) has been used as a precursor for the chemical vapor deposition epitaxy of silicon and Si1-yC y alloys at temperatures from 550 to 700 °C. This paper summarizes the experimental findings of high growth rates of high quality epitaxy and planar films and then proposes mechanisms to support these observations. Concerted mechanisms, which can lead to growth without the usual requirement of open sites on an otherwise hydrogen covered surface are described as they relate to high -order silanes.

UR - http://www.scopus.com/inward/record.url?scp=63149136318&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63149136318&partnerID=8YFLogxK

U2 - 10.1149/1.2986839

DO - 10.1149/1.2986839

M3 - Conference contribution

AN - SCOPUS:63149136318

SN - 9781566776561

T3 - ECS Transactions

SP - 799

EP - 805

BT - ECS Transactions - SiGe, Ge, and Related Compounds 3

PB - Electrochemical Society Inc.

T2 - 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting

Y2 - 12 October 2008 through 17 October 2008

ER -

Chemical vapor deposition epitaxy of silicon-based materials using neopentasilane

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this