Chemical vapor deposition epitaxy of silicon and silicon-carbon alloys at high rates and low temperatures using neopentasilane

J. C. Sturm; K. H. Chung; N. Yao; E. Sanchez; K. K. Singh; D. Carlson; S. Kuppurao

doi:10.1149/1.2727429

Chemical vapor deposition epitaxy of silicon and silicon-carbon alloys at high rates and low temperatures using neopentasilane

J. C. Sturm, K. H. Chung, N. Yao, E. Sanchez, K. K. Singh, D. Carlson, S. Kuppurao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

The silicon precursor neopentasilane is used to grow epitaxial silicon at high growth rates from 550 to 700°C, with rates over 100 nm/min achieved at 600°C. The layer quality as observed by TEM and the performance of FET's made in these films is high. Neopentasilane has also been used to grow dilute strained Si_1-yC_y alloys on silicon with very high growth rates. For carbon levels on the order of 2%, strained layers were grown at rates over 40 nm/min.

Original language	English (US)
Title of host publication	ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS
Subtitle of host publication	New Materials, Processes and Equipment, 3
Publisher	Electrochemical Society Inc.
Pages	429-436
Number of pages	8
Edition	1
ISBN (Electronic)	9781566775502
ISBN (Print)	9781566775502
DOIs	https://doi.org/10.1149/1.2727429
State	Published - 2007
Event	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting - Chicago, IL, United States Duration: May 6 2007 → May 10 2007

Publication series

Name	ECS Transactions
Number	1
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting
Country/Territory	United States
City	Chicago, IL
Period	5/6/07 → 5/10/07

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/1.2727429

Cite this

Sturm, J. C., Chung, K. H., Yao, N., Sanchez, E., Singh, K. K., Carlson, D., & Kuppurao, S. (2007). Chemical vapor deposition epitaxy of silicon and silicon-carbon alloys at high rates and low temperatures using neopentasilane. In ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 (1 ed., pp. 429-436). (ECS Transactions; Vol. 6, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/1.2727429

Sturm, J. C. ; Chung, K. H. ; Yao, N. et al. / Chemical vapor deposition epitaxy of silicon and silicon-carbon alloys at high rates and low temperatures using neopentasilane. ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1. ed. Electrochemical Society Inc., 2007. pp. 429-436 (ECS Transactions; 1).

@inproceedings{247bdcc8b744447fa9a370bd63d63e67,

title = "Chemical vapor deposition epitaxy of silicon and silicon-carbon alloys at high rates and low temperatures using neopentasilane",

abstract = "The silicon precursor neopentasilane is used to grow epitaxial silicon at high growth rates from 550 to 700°C, with rates over 100 nm/min achieved at 600°C. The layer quality as observed by TEM and the performance of FET's made in these films is high. Neopentasilane has also been used to grow dilute strained Si1-yCy alloys on silicon with very high growth rates. For carbon levels on the order of 2%, strained layers were grown at rates over 40 nm/min.",

author = "Sturm, {J. C.} and Chung, {K. H.} and N. Yao and E. Sanchez and Singh, {K. K.} and D. Carlson and S. Kuppurao",

year = "2007",

doi = "10.1149/1.2727429",

language = "English (US)",

isbn = "9781566775502",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "1",

pages = "429--436",

booktitle = "ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS",

edition = "1",

note = "International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",

}

Sturm, JC, Chung, KH, Yao, N, Sanchez, E, Singh, KK, Carlson, D & Kuppurao, S 2007, Chemical vapor deposition epitaxy of silicon and silicon-carbon alloys at high rates and low temperatures using neopentasilane. in ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1 edn, ECS Transactions, no. 1, vol. 6, Electrochemical Society Inc., pp. 429-436, International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting, Chicago, IL, United States, 5/6/07. https://doi.org/10.1149/1.2727429

Chemical vapor deposition epitaxy of silicon and silicon-carbon alloys at high rates and low temperatures using neopentasilane. / Sturm, J. C.; Chung, K. H.; Yao, N. et al.
ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1. ed. Electrochemical Society Inc., 2007. p. 429-436 (ECS Transactions; Vol. 6, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Chemical vapor deposition epitaxy of silicon and silicon-carbon alloys at high rates and low temperatures using neopentasilane

AU - Sturm, J. C.

AU - Chung, K. H.

AU - Yao, N.

AU - Sanchez, E.

AU - Singh, K. K.

AU - Carlson, D.

AU - Kuppurao, S.

PY - 2007

Y1 - 2007

N2 - The silicon precursor neopentasilane is used to grow epitaxial silicon at high growth rates from 550 to 700°C, with rates over 100 nm/min achieved at 600°C. The layer quality as observed by TEM and the performance of FET's made in these films is high. Neopentasilane has also been used to grow dilute strained Si1-yCy alloys on silicon with very high growth rates. For carbon levels on the order of 2%, strained layers were grown at rates over 40 nm/min.

AB - The silicon precursor neopentasilane is used to grow epitaxial silicon at high growth rates from 550 to 700°C, with rates over 100 nm/min achieved at 600°C. The layer quality as observed by TEM and the performance of FET's made in these films is high. Neopentasilane has also been used to grow dilute strained Si1-yCy alloys on silicon with very high growth rates. For carbon levels on the order of 2%, strained layers were grown at rates over 40 nm/min.

UR - http://www.scopus.com/inward/record.url?scp=45949090969&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45949090969&partnerID=8YFLogxK

U2 - 10.1149/1.2727429

DO - 10.1149/1.2727429

M3 - Conference contribution

AN - SCOPUS:45949090969

SN - 9781566775502

T3 - ECS Transactions

SP - 429

EP - 436

BT - ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS

PB - Electrochemical Society Inc.

T2 - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting

Y2 - 6 May 2007 through 10 May 2007

ER -

Sturm JC, Chung KH, Yao N, Sanchez E, Singh KK, Carlson D et al. Chemical vapor deposition epitaxy of silicon and silicon-carbon alloys at high rates and low temperatures using neopentasilane. In ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1 ed. Electrochemical Society Inc. 2007. p. 429-436. (ECS Transactions; 1). doi: 10.1149/1.2727429

Chemical vapor deposition epitaxy of silicon and silicon-carbon alloys at high rates and low temperatures using neopentasilane

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this