Chemical pseudopotential and semiconductor surface states

A. Selloni; S. Ossicini; E. Tosatti

doi:10.1007/BF02725824

Chemical pseudopotential and semiconductor surface states

A. Selloni, S. Ossicini, E. Tosatti

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report preliminary results on the first surface state calculation based on the chemical-pseudopotential approach developed by Anderson and Bullett. For the test surface ideal Si(111), an essentially parameter-free calculation yields results close to those of previous calculations.

Original language	English (US)
Pages (from-to)	786-790
Number of pages	5
Journal	Il Nuovo Cimento B Series 11
Volume	39
Issue number	2
DOIs	https://doi.org/10.1007/BF02725824
State	Published - Jun 1977
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1007/BF02725824

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title = "Chemical pseudopotential and semiconductor surface states",

abstract = "We report preliminary results on the first surface state calculation based on the chemical-pseudopotential approach developed by Anderson and Bullett. For the test surface ideal Si(111), an essentially parameter-free calculation yields results close to those of previous calculations.",

author = "A. Selloni and S. Ossicini and E. Tosatti",

year = "1977",

month = jun,

doi = "10.1007/BF02725824",

language = "English (US)",

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T1 - Chemical pseudopotential and semiconductor surface states

AU - Selloni, A.

AU - Ossicini, S.

AU - Tosatti, E.

PY - 1977/6

Y1 - 1977/6

N2 - We report preliminary results on the first surface state calculation based on the chemical-pseudopotential approach developed by Anderson and Bullett. For the test surface ideal Si(111), an essentially parameter-free calculation yields results close to those of previous calculations.

AB - We report preliminary results on the first surface state calculation based on the chemical-pseudopotential approach developed by Anderson and Bullett. For the test surface ideal Si(111), an essentially parameter-free calculation yields results close to those of previous calculations.

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DO - 10.1007/BF02725824

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AN - SCOPUS:51649167056

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SP - 786

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JO - Il Nuovo Cimento B Series 11

JF - Il Nuovo Cimento B Series 11

IS - 2

ER -

Chemical pseudopotential and semiconductor surface states

Abstract

All Science Journal Classification (ASJC) codes

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