Chemical pseudopotential and semiconductor surface states

A. Selloni, S. Ossicini, E. Tosatti

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We report preliminary results on the first surface state calculation based on the chemical-pseudopotential approach developed by Anderson and Bullett. For the test surface ideal Si(111), an essentially parameter-free calculation yields results close to those of previous calculations.

Original languageEnglish (US)
Pages (from-to)786-790
Number of pages5
JournalIl Nuovo Cimento B Series 11
Issue number2
StatePublished - Jun 1977
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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