Ultraviolet photoemission spectroscopy, electron-energy-loss spectroscopy, Auger-electron spectroscopy, and x-ray photoemission spectroscopy were used to study the formation of Ag/GaSb(110) interfaces at room and low temperature. Interfaces formed at room temperature show extensive Ag clustering and some chemical redistribution due to interface disruption. A substantial reduction in adatom surface mobility and clustering is observed at low temperature. The resulting changes in surface Fermi-level (EF) movements, namely the overshoot of the EF position on p-type samples and the delayed EF movement on n-type samples, confirm earlier trends found on low-temperature GaAs. EF pinning is found to occur in a coverage range where metallicity appears in the overlayer.
|Original language||English (US)|
|Number of pages||9|
|Journal||Physical Review B|
|State||Published - 1989|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics