Chemical and electronic properties of the Ag/GaSb(110) interface formed at room and low temperature

D. Mao, Antoine Kahn, L. Soonckindt

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

Ultraviolet photoemission spectroscopy, electron-energy-loss spectroscopy, Auger-electron spectroscopy, and x-ray photoemission spectroscopy were used to study the formation of Ag/GaSb(110) interfaces at room and low temperature. Interfaces formed at room temperature show extensive Ag clustering and some chemical redistribution due to interface disruption. A substantial reduction in adatom surface mobility and clustering is observed at low temperature. The resulting changes in surface Fermi-level (EF) movements, namely the overshoot of the EF position on p-type samples and the delayed EF movement on n-type samples, confirm earlier trends found on low-temperature GaAs. EF pinning is found to occur in a coverage range where metallicity appears in the overlayer.

Original languageEnglish (US)
Pages (from-to)5579-5587
Number of pages9
JournalPhysical Review B
Volume40
Issue number8
DOIs
StatePublished - Jan 1 1989

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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