Charging efficiency and lifetime of image-bound electrons on a dielectric surface

M. Biasini; R. D. Gann; J. A. Yarmoff; A. P. Mills; L. N. Pfeiffer; K. W. West; X. P.A. Gao; B. C.D. Williams

doi:10.1063/1.1906314

Charging efficiency and lifetime of image-bound electrons on a dielectric surface

M. Biasini, R. D. Gann, J. A. Yarmoff, A. P. Mills, L. N. Pfeiffer, K. W. West, X. P.A. Gao, B. C.D. Williams

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The surface charge generated on an Al0.24 Ga0.76 AsGaAs quantum well sample by electron bombardment was monitored by measuring the change in the conductivity of the channel. Upon turning off the electron bombardment the surface charge on adsorbed layers of xenon and water at 8 K decays in room temperature darkness with a lifetime τ=0.30±0.02 s. The average charging efficiency, μ0, defined as the ratio of the charge collected by the surface to the beam current times the charging time, is μ0 ≃0.001. Surface charging proves to be an effective method for contactless gating of field effect devices.

Original language	English (US)
Article number	162111
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	16
DOIs	https://doi.org/10.1063/1.1906314
State	Published - Apr 18 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1906314

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title = "Charging efficiency and lifetime of image-bound electrons on a dielectric surface",

abstract = "The surface charge generated on an Al0.24 Ga0.76 AsGaAs quantum well sample by electron bombardment was monitored by measuring the change in the conductivity of the channel. Upon turning off the electron bombardment the surface charge on adsorbed layers of xenon and water at 8 K decays in room temperature darkness with a lifetime τ=0.30±0.02 s. The average charging efficiency, μ0, defined as the ratio of the charge collected by the surface to the beam current times the charging time, is μ0 ≃0.001. Surface charging proves to be an effective method for contactless gating of field effect devices.",

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T1 - Charging efficiency and lifetime of image-bound electrons on a dielectric surface

AU - Biasini, M.

AU - Gann, R. D.

AU - Yarmoff, J. A.

AU - Mills, A. P.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Gao, X. P.A.

AU - Williams, B. C.D.

PY - 2005/4/18

Y1 - 2005/4/18

N2 - The surface charge generated on an Al0.24 Ga0.76 AsGaAs quantum well sample by electron bombardment was monitored by measuring the change in the conductivity of the channel. Upon turning off the electron bombardment the surface charge on adsorbed layers of xenon and water at 8 K decays in room temperature darkness with a lifetime τ=0.30±0.02 s. The average charging efficiency, μ0, defined as the ratio of the charge collected by the surface to the beam current times the charging time, is μ0 ≃0.001. Surface charging proves to be an effective method for contactless gating of field effect devices.

AB - The surface charge generated on an Al0.24 Ga0.76 AsGaAs quantum well sample by electron bombardment was monitored by measuring the change in the conductivity of the channel. Upon turning off the electron bombardment the surface charge on adsorbed layers of xenon and water at 8 K decays in room temperature darkness with a lifetime τ=0.30±0.02 s. The average charging efficiency, μ0, defined as the ratio of the charge collected by the surface to the beam current times the charging time, is μ0 ≃0.001. Surface charging proves to be an effective method for contactless gating of field effect devices.

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Charging efficiency and lifetime of image-bound electrons on a dielectric surface

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