Charge relaxation in a single-electron Si/SiGe double quantum dot

K. Wang; C. Payette; Y. Dovzhenko; P. W. Deelman; J. R. Petta

doi:10.1103/PhysRevLett.111.046801

Charge relaxation in a single-electron Si/SiGe double quantum dot

K. Wang, C. Payette, Y. Dovzhenko, P. W. Deelman, J. R. Petta

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72 Scopus citations

Abstract

We measure the interdot charge relaxation time T₁ of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals the presence of a low-lying excited state. We systematically measure T₁ as a function of detuning and interdot tunnel coupling and show that it is tunable over four orders of magnitude, with a maximum of 45 μs for our device configuration.

Original language	English (US)
Article number	046801
Journal	Physical review letters
Volume	111
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevLett.111.046801
State	Published - Jul 22 2013

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.111.046801

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abstract = "We measure the interdot charge relaxation time T1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals the presence of a low-lying excited state. We systematically measure T1 as a function of detuning and interdot tunnel coupling and show that it is tunable over four orders of magnitude, with a maximum of 45 μs for our device configuration.",

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AU - Payette, C.

AU - Dovzhenko, Y.

AU - Deelman, P. W.

AU - Petta, J. R.

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Charge relaxation in a single-electron Si/SiGe double quantum dot

Abstract

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