Charge relaxation in a single-electron Si/SiGe double quantum dot

K. Wang, C. Payette, Y. Dovzhenko, P. W. Deelman, J. R. Petta

Research output: Contribution to journalArticle

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Abstract

We measure the interdot charge relaxation time T1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals the presence of a low-lying excited state. We systematically measure T1 as a function of detuning and interdot tunnel coupling and show that it is tunable over four orders of magnitude, with a maximum of 45 μs for our device configuration.

Original languageEnglish (US)
Article number046801
JournalPhysical review letters
Volume111
Issue number4
DOIs
StatePublished - Jul 22 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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