TY - JOUR
T1 - Charge generation layers comprising transition metal-oxide/organic interfaces
T2 - Electronic structure and charge generation mechanism
AU - Meyer, J.
AU - Kröger, M.
AU - Hamwi, S.
AU - Gnam, F.
AU - Riedl, T.
AU - Kowalsky, W.
AU - Kahn, Antoine
N1 - Funding Information:
Work in Princeton was supported by the National Science Foundation (Grant No. DMR-0705920), the Princeton MRSEC of the NSF (Grant No. DMR-0819860), and the Office of Science DOE Energy Frontier Research Center for Interface Science: Solar Electric Materials (DE-S0001084). Work in Braunschweig was financially supported by the German Federal Ministry for Education and Research (FKZ: 13N8995, 13N9152). J. M. acknowledges the Deutsche Forschungsgemeinschaft (DFG) for generous support within the postdoctoral fellowship program.
Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - The energetics of an archetype charge generation layer (CGL) architecture comprising of 4, 4′, 4″ -tris(N -carbazolyl)triphenylamine (TCTA), tungsten oxide (WO3), and bathophenanthroline (BPhen) n-doped with cesium carbonate (Cs2 CO3) are determined by ultraviolet and inverse photoemission spectroscopy. We show that the charge generation process occurs at the interface between the hole-transport material (TCTA) and WO3 and not, as commonly assumed, at the interface between WO 3 and the n-doped electron-transport material (BPhen: Cs2 CO3). However, the n-doped layer is also essential to the realization of an efficient CGL structure. The charge generation mechanism occurs via electron transfer from the TCTA highest occupied molecular orbital level to the transition metal-oxide conduction band.
AB - The energetics of an archetype charge generation layer (CGL) architecture comprising of 4, 4′, 4″ -tris(N -carbazolyl)triphenylamine (TCTA), tungsten oxide (WO3), and bathophenanthroline (BPhen) n-doped with cesium carbonate (Cs2 CO3) are determined by ultraviolet and inverse photoemission spectroscopy. We show that the charge generation process occurs at the interface between the hole-transport material (TCTA) and WO3 and not, as commonly assumed, at the interface between WO 3 and the n-doped electron-transport material (BPhen: Cs2 CO3). However, the n-doped layer is also essential to the realization of an efficient CGL structure. The charge generation mechanism occurs via electron transfer from the TCTA highest occupied molecular orbital level to the transition metal-oxide conduction band.
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U2 - 10.1063/1.3427430
DO - 10.1063/1.3427430
M3 - Article
AN - SCOPUS:77953062808
SN - 0003-6951
VL - 96
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 19
M1 - 193302
ER -