Characterization of the Thermal Conductivity of CVD Diamond for GaN-on-Diamond Devices

Luke Yates; Aditya Sood; Zhe Cheng; Thomas Bougher; Kirkland Malcolm; Jungwan Cho; Mehdi Asheghi; Kenneth Goodson; Mark Goorsky; Firooz Faili; Daniel J. Twitchen; Samuel Graham

doi:10.1109/CSICS.2016.7751032

Characterization of the Thermal Conductivity of CVD Diamond for GaN-on-Diamond Devices

Luke Yates, Aditya Sood, Zhe Cheng, Thomas Bougher, Kirkland Malcolm, Jungwan Cho, Mehdi Asheghi, Kenneth Goodson, Mark Goorsky, Firooz Faili, Daniel J. Twitchen, Samuel Graham

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

32 Scopus citations

Abstract

Diamond films grown by chemical vapor deposition have the potential to improve the thermal management and reliability of AlGaN/GaN high electron mobility transistors. The integration of CVD diamond with GaN involves the nucleation and growth of diamond films on GaN which induces a vertical gradient in thermal conductivity of the diamond and can result in bulk properties that depend greatly on growth conditions. Thus accurate characterization of the thermal conductivity of CVD diamond, especially the lower conductivity near the growth interface is needed to assess the impact on AlGaN/GaN HEMTs. In this work, we present measurements of the thickness dependence of CVD diamond with thicknesses ranging from 5 to 13.8 μ m in addition to bulk diamond substrates using time domain thermoreflectance. Measurements were made on the same samples in two different laboratories which showed excellent correlation between the measurements. The diamond properties were then utilized in a thermal model of a 10 finger AlGaN/GaN HEMT to predict the impact of device junction temperature. Compared to a device made on SiC operating at 5 W/mm, a junction temperature reduction of 30-40% was seen when using CVD diamond and the same device size.

Original language	English (US)
Title of host publication	2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509016082
DOIs	https://doi.org/10.1109/CSICS.2016.7751032
State	Published - Nov 21 2016
Externally published	Yes
Event	2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Austin, United States Duration: Oct 23 2016 → Oct 26 2016

Publication series

Name	Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Volume	2016-November
ISSN (Print)	1550-8781

Conference

Conference	2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016
Country/Territory	United States
City	Austin
Period	10/23/16 → 10/26/16

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/CSICS.2016.7751032

Cite this

Yates, L., Sood, A., Cheng, Z., Bougher, T., Malcolm, K., Cho, J., Asheghi, M., Goodson, K., Goorsky, M., Faili, F., Twitchen, D. J., & Graham, S. (2016). Characterization of the Thermal Conductivity of CVD Diamond for GaN-on-Diamond Devices. In 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest Article 7751032 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSICS.2016.7751032

Yates, Luke ; Sood, Aditya ; Cheng, Zhe et al. / Characterization of the Thermal Conductivity of CVD Diamond for GaN-on-Diamond Devices. 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest. Institute of Electrical and Electronics Engineers Inc., 2016. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

@inproceedings{cd40ebc36fe84ffc9f1d1dbc14409ec8,

title = "Characterization of the Thermal Conductivity of CVD Diamond for GaN-on-Diamond Devices",

abstract = "Diamond films grown by chemical vapor deposition have the potential to improve the thermal management and reliability of AlGaN/GaN high electron mobility transistors. The integration of CVD diamond with GaN involves the nucleation and growth of diamond films on GaN which induces a vertical gradient in thermal conductivity of the diamond and can result in bulk properties that depend greatly on growth conditions. Thus accurate characterization of the thermal conductivity of CVD diamond, especially the lower conductivity near the growth interface is needed to assess the impact on AlGaN/GaN HEMTs. In this work, we present measurements of the thickness dependence of CVD diamond with thicknesses ranging from 5 to 13.8 μ m in addition to bulk diamond substrates using time domain thermoreflectance. Measurements were made on the same samples in two different laboratories which showed excellent correlation between the measurements. The diamond properties were then utilized in a thermal model of a 10 finger AlGaN/GaN HEMT to predict the impact of device junction temperature. Compared to a device made on SiC operating at 5 W/mm, a junction temperature reduction of 30-40% was seen when using CVD diamond and the same device size.",

author = "Luke Yates and Aditya Sood and Zhe Cheng and Thomas Bougher and Kirkland Malcolm and Jungwan Cho and Mehdi Asheghi and Kenneth Goodson and Mark Goorsky and Firooz Faili and Twitchen, {Daniel J.} and Samuel Graham",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 ; Conference date: 23-10-2016 Through 26-10-2016",

year = "2016",

month = nov,

day = "21",

doi = "10.1109/CSICS.2016.7751032",

language = "English (US)",

series = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",

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Yates, L, Sood, A, Cheng, Z, Bougher, T, Malcolm, K, Cho, J, Asheghi, M, Goodson, K, Goorsky, M, Faili, F, Twitchen, DJ & Graham, S 2016, Characterization of the Thermal Conductivity of CVD Diamond for GaN-on-Diamond Devices. in 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest., 7751032, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016, Austin, United States, 10/23/16. https://doi.org/10.1109/CSICS.2016.7751032

Characterization of the Thermal Conductivity of CVD Diamond for GaN-on-Diamond Devices. / Yates, Luke; Sood, Aditya; Cheng, Zhe et al.
2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest. Institute of Electrical and Electronics Engineers Inc., 2016. 7751032 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Characterization of the Thermal Conductivity of CVD Diamond for GaN-on-Diamond Devices

AU - Yates, Luke

AU - Sood, Aditya

AU - Cheng, Zhe

AU - Bougher, Thomas

AU - Malcolm, Kirkland

AU - Cho, Jungwan

AU - Asheghi, Mehdi

AU - Goodson, Kenneth

AU - Goorsky, Mark

AU - Faili, Firooz

AU - Twitchen, Daniel J.

AU - Graham, Samuel

PY - 2016/11/21

Y1 - 2016/11/21

N2 - Diamond films grown by chemical vapor deposition have the potential to improve the thermal management and reliability of AlGaN/GaN high electron mobility transistors. The integration of CVD diamond with GaN involves the nucleation and growth of diamond films on GaN which induces a vertical gradient in thermal conductivity of the diamond and can result in bulk properties that depend greatly on growth conditions. Thus accurate characterization of the thermal conductivity of CVD diamond, especially the lower conductivity near the growth interface is needed to assess the impact on AlGaN/GaN HEMTs. In this work, we present measurements of the thickness dependence of CVD diamond with thicknesses ranging from 5 to 13.8 μ m in addition to bulk diamond substrates using time domain thermoreflectance. Measurements were made on the same samples in two different laboratories which showed excellent correlation between the measurements. The diamond properties were then utilized in a thermal model of a 10 finger AlGaN/GaN HEMT to predict the impact of device junction temperature. Compared to a device made on SiC operating at 5 W/mm, a junction temperature reduction of 30-40% was seen when using CVD diamond and the same device size.

AB - Diamond films grown by chemical vapor deposition have the potential to improve the thermal management and reliability of AlGaN/GaN high electron mobility transistors. The integration of CVD diamond with GaN involves the nucleation and growth of diamond films on GaN which induces a vertical gradient in thermal conductivity of the diamond and can result in bulk properties that depend greatly on growth conditions. Thus accurate characterization of the thermal conductivity of CVD diamond, especially the lower conductivity near the growth interface is needed to assess the impact on AlGaN/GaN HEMTs. In this work, we present measurements of the thickness dependence of CVD diamond with thicknesses ranging from 5 to 13.8 μ m in addition to bulk diamond substrates using time domain thermoreflectance. Measurements were made on the same samples in two different laboratories which showed excellent correlation between the measurements. The diamond properties were then utilized in a thermal model of a 10 finger AlGaN/GaN HEMT to predict the impact of device junction temperature. Compared to a device made on SiC operating at 5 W/mm, a junction temperature reduction of 30-40% was seen when using CVD diamond and the same device size.

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DO - 10.1109/CSICS.2016.7751032

M3 - Conference contribution

AN - SCOPUS:85005959341

T3 - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

BT - 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016

Y2 - 23 October 2016 through 26 October 2016

ER -

Yates L, Sood A, Cheng Z, Bougher T, Malcolm K, Cho J et al. Characterization of the Thermal Conductivity of CVD Diamond for GaN-on-Diamond Devices. In 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest. Institute of Electrical and Electronics Engineers Inc. 2016. 7751032. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). doi: 10.1109/CSICS.2016.7751032

Characterization of the Thermal Conductivity of CVD Diamond for GaN-on-Diamond Devices

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