Characterization of the Thermal Conductivity of CVD Diamond for GaN-on-Diamond Devices

Luke Yates, Aditya Sood, Zhe Cheng, Thomas Bougher, Kirkland Malcolm, Jungwan Cho, Mehdi Asheghi, Kenneth Goodson, Mark Goorsky, Firooz Faili, Daniel J. Twitchen, Samuel Graham

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Scopus citations

Abstract

Diamond films grown by chemical vapor deposition have the potential to improve the thermal management and reliability of AlGaN/GaN high electron mobility transistors. The integration of CVD diamond with GaN involves the nucleation and growth of diamond films on GaN which induces a vertical gradient in thermal conductivity of the diamond and can result in bulk properties that depend greatly on growth conditions. Thus accurate characterization of the thermal conductivity of CVD diamond, especially the lower conductivity near the growth interface is needed to assess the impact on AlGaN/GaN HEMTs. In this work, we present measurements of the thickness dependence of CVD diamond with thicknesses ranging from 5 to 13.8 μ m in addition to bulk diamond substrates using time domain thermoreflectance. Measurements were made on the same samples in two different laboratories which showed excellent correlation between the measurements. The diamond properties were then utilized in a thermal model of a 10 finger AlGaN/GaN HEMT to predict the impact of device junction temperature. Compared to a device made on SiC operating at 5 W/mm, a junction temperature reduction of 30-40% was seen when using CVD diamond and the same device size.

Original languageEnglish (US)
Title of host publication2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Technical Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509016082
DOIs
StatePublished - Nov 21 2016
Externally publishedYes
Event2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016 - Austin, United States
Duration: Oct 23 2016Oct 26 2016

Publication series

NameTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Volume2016-November
ISSN (Print)1550-8781

Conference

Conference2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016
Country/TerritoryUnited States
CityAustin
Period10/23/1610/26/16

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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