Characterization of the anomalous giant piezoresistance in AlAs two-dimensional electrons with anti-dot lattices

O. Gunawan, T. Gokmen, E. P. De Poortere, M. Shayegan

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We report the characterization of a giant piezoresistance effect observed in a two-valley, two-dimensional electron system confined to an AlAs quantum well and patterned with anti-dot lattices of ∼1 μm period. The system exhibits a low-temperature piezoresistive gauge factor (the fractional change in resistance divided by the fractional change in the sample's length), which depends on the anti-dot lattice period and can be as high as 22 000. Via monitoring the resistance of a simple, 40 μm long Hall bar sample based on this system, we are readily able to measure strain values down to 10 -8 or, equivalently, length changes of the order of 1/100 of the Bohr radius.

Original languageEnglish (US)
Number of pages1
JournalSemiconductor Science and Technology
Volume23
Issue number8
DOIs
StatePublished - Aug 1 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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