Characterization of Si/Si1-xGex/Si quantum wells by cathodoluminescence imaging and spectroscopy

V. Higgs; E. C. Lightowlers; X. Xiao; J. C. Sturm

doi:10.1063/1.111064

Characterization of Si/Si_1-xGe_x/Si quantum wells by cathodoluminescence imaging and spectroscopy

V. Higgs, E. C. Lightowlers, X. Xiao, J. C. Sturm

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6 Scopus citations

Abstract

Cathodoluminescence (CL) imaging and spectroscopy have been used to characterize fully strained SiGe quantum wells grown on Si. At T≊5 K, the CL spectra contain only band edge luminescence features. Monochromatic imaging with the no-phonon line attributed to the bound excitons in the quantum well, has shown that the distribution of the luminescence from the wells is not uniform. The thinnest well (33 Å) contained a low density of nonradiative (luminescence reduction up to 100%) spots 40-100 μm in size. The thickest well (500 Å) contained similar nonradiative spots and also dark line features oriented along the 〈110〉 directions. These dark line features are areas of nonradiative recombination (up to 70%) and have been identified by transmission electron microscopy as misfit dislocations.

Original language	English (US)
Pages (from-to)	607-609
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	5
DOIs	https://doi.org/10.1063/1.111064
State	Published - 1994

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.111064

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title = "Characterization of Si/Si1-xGex/Si quantum wells by cathodoluminescence imaging and spectroscopy",

abstract = "Cathodoluminescence (CL) imaging and spectroscopy have been used to characterize fully strained SiGe quantum wells grown on Si. At T≊5 K, the CL spectra contain only band edge luminescence features. Monochromatic imaging with the no-phonon line attributed to the bound excitons in the quantum well, has shown that the distribution of the luminescence from the wells is not uniform. The thinnest well (33 {\AA}) contained a low density of nonradiative (luminescence reduction up to 100%) spots 40-100 μm in size. The thickest well (500 {\AA}) contained similar nonradiative spots and also dark line features oriented along the 〈110〉 directions. These dark line features are areas of nonradiative recombination (up to 70%) and have been identified by transmission electron microscopy as misfit dislocations.",

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T1 - Characterization of Si/Si1-xGex/Si quantum wells by cathodoluminescence imaging and spectroscopy

AU - Higgs, V.

AU - Lightowlers, E. C.

AU - Xiao, X.

AU - Sturm, J. C.

PY - 1994

Y1 - 1994

N2 - Cathodoluminescence (CL) imaging and spectroscopy have been used to characterize fully strained SiGe quantum wells grown on Si. At T≊5 K, the CL spectra contain only band edge luminescence features. Monochromatic imaging with the no-phonon line attributed to the bound excitons in the quantum well, has shown that the distribution of the luminescence from the wells is not uniform. The thinnest well (33 Å) contained a low density of nonradiative (luminescence reduction up to 100%) spots 40-100 μm in size. The thickest well (500 Å) contained similar nonradiative spots and also dark line features oriented along the 〈110〉 directions. These dark line features are areas of nonradiative recombination (up to 70%) and have been identified by transmission electron microscopy as misfit dislocations.

AB - Cathodoluminescence (CL) imaging and spectroscopy have been used to characterize fully strained SiGe quantum wells grown on Si. At T≊5 K, the CL spectra contain only band edge luminescence features. Monochromatic imaging with the no-phonon line attributed to the bound excitons in the quantum well, has shown that the distribution of the luminescence from the wells is not uniform. The thinnest well (33 Å) contained a low density of nonradiative (luminescence reduction up to 100%) spots 40-100 μm in size. The thickest well (500 Å) contained similar nonradiative spots and also dark line features oriented along the 〈110〉 directions. These dark line features are areas of nonradiative recombination (up to 70%) and have been identified by transmission electron microscopy as misfit dislocations.

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Characterization of Si/Si_1-xGe_x/Si quantum wells by cathodoluminescence imaging and spectroscopy

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