We report the carrier transport properties of CuIn(S1-xSex)2 (0 ≤ x ≤ 1), a promising chalcopyrite semiconductor series for solar water splitting. A low concentration Mg dopant is used to decrease the carrier resistivity through facilitating bulk p-type transport at ambient temperature. Temperature-dependent resistivity measurements reveal a four-order magnitude decrease in bulk electrical resistivity (from 103 to 10-1 Ohm cm) for 1% Mg-doped CuIn(S1-xSex)2 as x increases from 0 to 1. Hall effect measurements at room temperature reveal p-type majority carrier concentrations that vary from 1015 to 1018 cm-3 and mobilities of approximately 1-10 cm2 V-1 s-1. These results provide insights into the fundamental carrier transport properties of CuIn(S1-xSex)2 and will be of value in optimizing these materials further for photoelectrochemistry applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films