Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn(S1-xSex)2

Jessica J. Frick; Satya K. Kushwaha; Robert J. Cava; Andrew B. Bocarsly

doi:10.1021/acs.jpcc.7b03152

Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn(S_1-xSe_x)₂

Jessica J. Frick, Satya K. Kushwaha, Robert J. Cava, Andrew B. Bocarsly

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report the carrier transport properties of CuIn(S_1-xSe_x)₂ (0 ≤ x ≤ 1), a promising chalcopyrite semiconductor series for solar water splitting. A low concentration Mg dopant is used to decrease the carrier resistivity through facilitating bulk p-type transport at ambient temperature. Temperature-dependent resistivity measurements reveal a four-order magnitude decrease in bulk electrical resistivity (from 10³ to 10^-1 Ohm cm) for 1% Mg-doped CuIn(S_1-xSe_x)₂ as x increases from 0 to 1. Hall effect measurements at room temperature reveal p-type majority carrier concentrations that vary from 10¹⁵ to 10¹⁸ cm^-3 and mobilities of approximately 1-10 cm² V^-1 s^-1. These results provide insights into the fundamental carrier transport properties of CuIn(S_1-xSe_x)₂ and will be of value in optimizing these materials further for photoelectrochemistry applications.

Original language	English (US)
Pages (from-to)	17046-17052
Number of pages	7
Journal	Journal of Physical Chemistry C
Volume	121
Issue number	32
DOIs	https://doi.org/10.1021/acs.jpcc.7b03152
State	Published - Aug 17 2017

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/acs.jpcc.7b03152

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@article{1cc36dd75716491dbe1f6057adb06064,

title = "Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn(S1-xSex)2",

abstract = "We report the carrier transport properties of CuIn(S1-xSex)2 (0 ≤ x ≤ 1), a promising chalcopyrite semiconductor series for solar water splitting. A low concentration Mg dopant is used to decrease the carrier resistivity through facilitating bulk p-type transport at ambient temperature. Temperature-dependent resistivity measurements reveal a four-order magnitude decrease in bulk electrical resistivity (from 103 to 10-1 Ohm cm) for 1% Mg-doped CuIn(S1-xSex)2 as x increases from 0 to 1. Hall effect measurements at room temperature reveal p-type majority carrier concentrations that vary from 1015 to 1018 cm-3 and mobilities of approximately 1-10 cm2 V-1 s-1. These results provide insights into the fundamental carrier transport properties of CuIn(S1-xSex)2 and will be of value in optimizing these materials further for photoelectrochemistry applications.",

author = "Frick, {Jessica J.} and Kushwaha, {Satya K.} and Cava, {Robert J.} and Bocarsly, {Andrew B.}",

note = "Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

year = "2017",

month = aug,

day = "17",

doi = "10.1021/acs.jpcc.7b03152",

language = "English (US)",

volume = "121",

pages = "17046--17052",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "32",

}

TY - JOUR

T1 - Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn(S1-xSex)2

AU - Frick, Jessica J.

AU - Kushwaha, Satya K.

AU - Cava, Robert J.

AU - Bocarsly, Andrew B.

PY - 2017/8/17

Y1 - 2017/8/17

N2 - We report the carrier transport properties of CuIn(S1-xSex)2 (0 ≤ x ≤ 1), a promising chalcopyrite semiconductor series for solar water splitting. A low concentration Mg dopant is used to decrease the carrier resistivity through facilitating bulk p-type transport at ambient temperature. Temperature-dependent resistivity measurements reveal a four-order magnitude decrease in bulk electrical resistivity (from 103 to 10-1 Ohm cm) for 1% Mg-doped CuIn(S1-xSex)2 as x increases from 0 to 1. Hall effect measurements at room temperature reveal p-type majority carrier concentrations that vary from 1015 to 1018 cm-3 and mobilities of approximately 1-10 cm2 V-1 s-1. These results provide insights into the fundamental carrier transport properties of CuIn(S1-xSex)2 and will be of value in optimizing these materials further for photoelectrochemistry applications.

AB - We report the carrier transport properties of CuIn(S1-xSex)2 (0 ≤ x ≤ 1), a promising chalcopyrite semiconductor series for solar water splitting. A low concentration Mg dopant is used to decrease the carrier resistivity through facilitating bulk p-type transport at ambient temperature. Temperature-dependent resistivity measurements reveal a four-order magnitude decrease in bulk electrical resistivity (from 103 to 10-1 Ohm cm) for 1% Mg-doped CuIn(S1-xSex)2 as x increases from 0 to 1. Hall effect measurements at room temperature reveal p-type majority carrier concentrations that vary from 1015 to 1018 cm-3 and mobilities of approximately 1-10 cm2 V-1 s-1. These results provide insights into the fundamental carrier transport properties of CuIn(S1-xSex)2 and will be of value in optimizing these materials further for photoelectrochemistry applications.

UR - http://www.scopus.com/inward/record.url?scp=85027690305&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027690305&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.7b03152

DO - 10.1021/acs.jpcc.7b03152

M3 - Article

AN - SCOPUS:85027690305

SN - 1932-7447

VL - 121

SP - 17046

EP - 17052

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 32

ER -

Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn(S_1-xSe_x)₂

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