Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge(100) substrates

A. Wan; V. Menon; S. R. Forrest; D. Wasserman; Stephen Aplin Lyon; Antoine Kahn

doi:10.1116/1.1774203

Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge(100) substrates

A. Wan, V. Menon, S. R. Forrest, D. Wasserman, Stephen Aplin Lyon, Antoine Kahn

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The growth of GaAs and Ge on the substrates of vicinal Ge (100) surfaces was analyzed using molecular beam epitaxy. The GaAs films exhibited low energy electron diffraction (LEED), low temperature photoluminescence and scanning electron microscopy. It was found that the Ge buffer layers on Ge (100) substrate orientations were prepared with regular arrays of double steps. It was observed that the GaAs grown on Ge (111) were smooth and of high crystalline quality while GaAs grown on GE (110) exhibited poor morphology and crystalline quality.

Original language	English (US)
Pages (from-to)	1893-1898
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	4
DOIs	https://doi.org/10.1116/1.1774203
State	Published - Jul 2004

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "The growth of GaAs and Ge on the substrates of vicinal Ge (100) surfaces was analyzed using molecular beam epitaxy. The GaAs films exhibited low energy electron diffraction (LEED), low temperature photoluminescence and scanning electron microscopy. It was found that the Ge buffer layers on Ge (100) substrate orientations were prepared with regular arrays of double steps. It was observed that the GaAs grown on Ge (111) were smooth and of high crystalline quality while GaAs grown on GE (110) exhibited poor morphology and crystalline quality.",

author = "A. Wan and V. Menon and Forrest, {S. R.} and D. Wasserman and Lyon, {Stephen Aplin} and Antoine Kahn",

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AU - Wan, A.

AU - Menon, V.

AU - Forrest, S. R.

AU - Wasserman, D.

AU - Lyon, Stephen Aplin

AU - Kahn, Antoine

PY - 2004/7

Y1 - 2004/7

N2 - The growth of GaAs and Ge on the substrates of vicinal Ge (100) surfaces was analyzed using molecular beam epitaxy. The GaAs films exhibited low energy electron diffraction (LEED), low temperature photoluminescence and scanning electron microscopy. It was found that the Ge buffer layers on Ge (100) substrate orientations were prepared with regular arrays of double steps. It was observed that the GaAs grown on Ge (111) were smooth and of high crystalline quality while GaAs grown on GE (110) exhibited poor morphology and crystalline quality.

AB - The growth of GaAs and Ge on the substrates of vicinal Ge (100) surfaces was analyzed using molecular beam epitaxy. The GaAs films exhibited low energy electron diffraction (LEED), low temperature photoluminescence and scanning electron microscopy. It was found that the Ge buffer layers on Ge (100) substrate orientations were prepared with regular arrays of double steps. It was observed that the GaAs grown on Ge (111) were smooth and of high crystalline quality while GaAs grown on GE (110) exhibited poor morphology and crystalline quality.

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Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge(100) substrates

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