Cation interdiffusion in GaAs-AlAs superlattices measured with Raman spectroscopy

J. Grant; J. Menéndez; L. N. Pfeiffer; K. W. West; E. Molinari; S. Baroni

doi:10.1063/1.105833

Cation interdiffusion in GaAs-AlAs superlattices measured with Raman spectroscopy

J. Grant
, J. Menéndez
, L. N. Pfeiffer
, K. W. West
, E. Molinari
, S. Baroni

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

A combined Raman and ab initio lattice dynamical study of ultrathin (GaAs)₄(AlAs)₄ superlattices, focusing mainly on AlAs-like vibrations, clearly shows that a significant amount of interdiffusion occurs in these samples when grown at conventional molecular-beam epitaxy temperatures between 580 and 640 °C. At these temperatures, growth interruption is found to have little impact on the structural quality of the superlattices.

Original language	English (US)
Pages (from-to)	2859-2861
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	22
DOIs	https://doi.org/10.1063/1.105833
State	Published - 1991
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.105833

Cite this

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title = "Cation interdiffusion in GaAs-AlAs superlattices measured with Raman spectroscopy",

abstract = "A combined Raman and ab initio lattice dynamical study of ultrathin (GaAs)4(AlAs)4 superlattices, focusing mainly on AlAs-like vibrations, clearly shows that a significant amount of interdiffusion occurs in these samples when grown at conventional molecular-beam epitaxy temperatures between 580 and 640 °C. At these temperatures, growth interruption is found to have little impact on the structural quality of the superlattices.",

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year = "1991",

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journal = "Applied Physics Letters",

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T1 - Cation interdiffusion in GaAs-AlAs superlattices measured with Raman spectroscopy

AU - Grant, J.

AU - Menéndez, J.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Molinari, E.

AU - Baroni, S.

PY - 1991

Y1 - 1991

N2 - A combined Raman and ab initio lattice dynamical study of ultrathin (GaAs)4(AlAs)4 superlattices, focusing mainly on AlAs-like vibrations, clearly shows that a significant amount of interdiffusion occurs in these samples when grown at conventional molecular-beam epitaxy temperatures between 580 and 640 °C. At these temperatures, growth interruption is found to have little impact on the structural quality of the superlattices.

AB - A combined Raman and ab initio lattice dynamical study of ultrathin (GaAs)4(AlAs)4 superlattices, focusing mainly on AlAs-like vibrations, clearly shows that a significant amount of interdiffusion occurs in these samples when grown at conventional molecular-beam epitaxy temperatures between 580 and 640 °C. At these temperatures, growth interruption is found to have little impact on the structural quality of the superlattices.

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DO - 10.1063/1.105833

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

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Cation interdiffusion in GaAs-AlAs superlattices measured with Raman spectroscopy

Abstract

All Science Journal Classification (ASJC) codes

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