Abstract
A combined Raman and ab initio lattice dynamical study of ultrathin (GaAs)4(AlAs)4 superlattices, focusing mainly on AlAs-like vibrations, clearly shows that a significant amount of interdiffusion occurs in these samples when grown at conventional molecular-beam epitaxy temperatures between 580 and 640 °C. At these temperatures, growth interruption is found to have little impact on the structural quality of the superlattices.
Original language | English (US) |
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Pages (from-to) | 2859-2861 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 59 |
Issue number | 22 |
DOIs | |
State | Published - 1991 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)