Ca0.5Sr0.5F2/GaAs (100) for epitaxial regrowth and electron-beam patterning

S. Horng; Y. Hirose; Antoine Kahn; C. Wrenn; R. Pfeffer

doi:10.1016/0169-4332(92)90350-7

Ca_0.5Sr_0.5F₂/GaAs (100) for epitaxial regrowth and electron-beam patterning

S. Horng
, Y. Hirose
, Antoine Kahn
, C. Wrenn
, R. Pfeffer

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Layers of GaAs and Ca_0.5Sr_0.5F₂ are grown by molecular beam epitaxy. The morphology, orientation, composition and crystallinity of the layers are analyzed as a function of growth temperature and surface treatment. The fluoride layers show a high degree of crystallinity and a smooth surface morphology. The crystallinity and morphology of the GaAs overlayer are improved by electron irradiation of the fluoride surface prior to GaAs growth followed by a two-step growth procedure for the GaAs overlayer. A technique of electron-beam patterning of the fluoride layer is developed and the formation of 3-5 μm features is demonstrated.

Original language	English (US)
Pages (from-to)	855-860
Number of pages	6
Journal	Applied Surface Science
Volume	56-58
Issue number	PART 2
DOIs	https://doi.org/10.1016/0169-4332(92)90350-7
State	Published - 1992

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

Access to Document

10.1016/0169-4332(92)90350-7

Cite this

@article{9f66513324894ade85335394b4c2242c,

title = "Ca0.5Sr0.5F2/GaAs (100) for epitaxial regrowth and electron-beam patterning",

abstract = "Layers of GaAs and Ca0.5Sr0.5F2 are grown by molecular beam epitaxy. The morphology, orientation, composition and crystallinity of the layers are analyzed as a function of growth temperature and surface treatment. The fluoride layers show a high degree of crystallinity and a smooth surface morphology. The crystallinity and morphology of the GaAs overlayer are improved by electron irradiation of the fluoride surface prior to GaAs growth followed by a two-step growth procedure for the GaAs overlayer. A technique of electron-beam patterning of the fluoride layer is developed and the formation of 3-5 μm features is demonstrated.",

author = "S. Horng and Y. Hirose and Antoine Kahn and C. Wrenn and R. Pfeffer",

year = "1992",

doi = "10.1016/0169-4332(92)90350-7",

language = "English (US)",

volume = "56-58",

pages = "855--860",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier BV",

number = "PART 2",

}

TY - JOUR

T1 - Ca0.5Sr0.5F2/GaAs (100) for epitaxial regrowth and electron-beam patterning

AU - Horng, S.

AU - Hirose, Y.

AU - Kahn, Antoine

AU - Wrenn, C.

AU - Pfeffer, R.

PY - 1992

Y1 - 1992

N2 - Layers of GaAs and Ca0.5Sr0.5F2 are grown by molecular beam epitaxy. The morphology, orientation, composition and crystallinity of the layers are analyzed as a function of growth temperature and surface treatment. The fluoride layers show a high degree of crystallinity and a smooth surface morphology. The crystallinity and morphology of the GaAs overlayer are improved by electron irradiation of the fluoride surface prior to GaAs growth followed by a two-step growth procedure for the GaAs overlayer. A technique of electron-beam patterning of the fluoride layer is developed and the formation of 3-5 μm features is demonstrated.

AB - Layers of GaAs and Ca0.5Sr0.5F2 are grown by molecular beam epitaxy. The morphology, orientation, composition and crystallinity of the layers are analyzed as a function of growth temperature and surface treatment. The fluoride layers show a high degree of crystallinity and a smooth surface morphology. The crystallinity and morphology of the GaAs overlayer are improved by electron irradiation of the fluoride surface prior to GaAs growth followed by a two-step growth procedure for the GaAs overlayer. A technique of electron-beam patterning of the fluoride layer is developed and the formation of 3-5 μm features is demonstrated.

UR - https://www.scopus.com/pages/publications/0026839897

UR - https://www.scopus.com/pages/publications/0026839897#tab=citedBy

U2 - 10.1016/0169-4332(92)90350-7

DO - 10.1016/0169-4332(92)90350-7

M3 - Article

AN - SCOPUS:0026839897

SN - 0169-4332

VL - 56-58

SP - 855

EP - 860

JO - Applied Surface Science

JF - Applied Surface Science

IS - PART 2

ER -

Ca_0.5Sr_0.5F₂/GaAs (100) for epitaxial regrowth and electron-beam patterning

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this