Ca0.5Sr0.5F2/GaAs (100) for epitaxial regrowth and electron-beam patterning

S. Horng, Y. Hirose, Antoine Kahn, C. Wrenn, R. Pfeffer

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Layers of GaAs and Ca0.5Sr0.5F2 are grown by molecular beam epitaxy. The morphology, orientation, composition and crystallinity of the layers are analyzed as a function of growth temperature and surface treatment. The fluoride layers show a high degree of crystallinity and a smooth surface morphology. The crystallinity and morphology of the GaAs overlayer are improved by electron irradiation of the fluoride surface prior to GaAs growth followed by a two-step growth procedure for the GaAs overlayer. A technique of electron-beam patterning of the fluoride layer is developed and the formation of 3-5 μm features is demonstrated.

Original languageEnglish (US)
Pages (from-to)855-860
Number of pages6
JournalApplied Surface Science
Volume56-58
Issue numberPART 2
DOIs
StatePublished - Jan 1 1992

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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