TY - JOUR
T1 - Carrier Transport and Recombination in Efficient “All-Small-Molecule” Solar Cells with the Nonfullerene Acceptor IDTBR
AU - Liang, Ru Ze
AU - Babics, Maxime
AU - Savikhin, Victoria
AU - Zhang, Weimin
AU - Le Corre, Vincent M.
AU - Lopatin, Sergei
AU - Kan, Zhipeng
AU - Firdaus, Yuliar
AU - Liu, Shengjian
AU - McCulloch, Iain
AU - Toney, Michael F.
AU - Beaujuge, Pierre M.
N1 - Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/7/5
Y1 - 2018/7/5
N2 - Reaching device efficiencies that can rival those of polymer-fullerene Bulk Heterojunction (BHJ) solar cells (>10%) remains challenging with the “All-Small-Molecule” (All-SM) approach, in part because of (i) the morphological limitations that prevail in the absence of polymer and (ii) the difficulty to raise and balance out carrier mobilities across the active layer. In this report, the authors show that blends of the SM donor DR3TBDTT (DR3) and the nonfullerene SM acceptor O-IDTBR are conducive to “All-SM” BHJ solar cells with high open-circuit voltages (VOC) >1.1 V and PCEs as high as 6.4% (avg. 6.1%) when the active layers are subjected to a post-processing solvent vapor-annealing (SVA) step with dimethyl disulfide (DMDS). Combining electron energy loss spectroscopy (EELS) analyses and systematic carrier recombination examinations, the authors show that SVA treatments with DMDS play a determining role in improving charge transport and reducing non-geminate recombination for the DR3:O-IDTBR system. Correlating the experimental results and device simulations, it is found that substantially higher BHJ solar cell efficiencies of >12% can be achieved if the IQE and carrier mobilities of the active layer are increased to >85% and >10−4 cm2 V−1 s−1, respectively, while suppressing the recombination rate constant k to <10−12 cm3 s−1.
AB - Reaching device efficiencies that can rival those of polymer-fullerene Bulk Heterojunction (BHJ) solar cells (>10%) remains challenging with the “All-Small-Molecule” (All-SM) approach, in part because of (i) the morphological limitations that prevail in the absence of polymer and (ii) the difficulty to raise and balance out carrier mobilities across the active layer. In this report, the authors show that blends of the SM donor DR3TBDTT (DR3) and the nonfullerene SM acceptor O-IDTBR are conducive to “All-SM” BHJ solar cells with high open-circuit voltages (VOC) >1.1 V and PCEs as high as 6.4% (avg. 6.1%) when the active layers are subjected to a post-processing solvent vapor-annealing (SVA) step with dimethyl disulfide (DMDS). Combining electron energy loss spectroscopy (EELS) analyses and systematic carrier recombination examinations, the authors show that SVA treatments with DMDS play a determining role in improving charge transport and reducing non-geminate recombination for the DR3:O-IDTBR system. Correlating the experimental results and device simulations, it is found that substantially higher BHJ solar cell efficiencies of >12% can be achieved if the IQE and carrier mobilities of the active layer are increased to >85% and >10−4 cm2 V−1 s−1, respectively, while suppressing the recombination rate constant k to <10−12 cm3 s−1.
KW - carrier recombination
KW - charge transport
KW - nonfullerene acceptors
KW - small molecule solar cells
KW - solvent vapor annealing
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U2 - 10.1002/aenm.201800264
DO - 10.1002/aenm.201800264
M3 - Article
AN - SCOPUS:85044717369
SN - 1614-6832
VL - 8
JO - Advanced Energy Materials
JF - Advanced Energy Materials
IS - 19
M1 - 1800264
ER -