Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys

J. Kolodzey; R. Schwarz; S. Aljishi; D. S. Shen; I. Campbell; P. M. Fauchet; S. A. Lyon; S. Wagner

doi:10.1016/0749-6036(86)90054-6

Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys

J. Kolodzey, R. Schwarz, S. Aljishi, D. S. Shen, I. Campbell, P. M. Fauchet, S. A. Lyon, S. Wagner

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The optical absorption of a-Si:H,F a-Si_0.4,Ge_0.6:H,F superlattices have been measured over a range of well sublayer widths. The absorption data have been analyzed to yield a defect density per superlattice interface of ≈10¹⁰ cm^-2. Electron and hole drift mobilities data suggest a transition from scattering dominated transport in states at the top of the barriers for short superlattice periods, to recombination dominated transport at the bottom of the wells for large periods. The data are used to estimate a characteristics scattering length of ≈3 nm in bulk a-Si_0.4Ge_0.6:H,F.

Original language	English (US)
Pages (from-to)	391-396
Number of pages	6
Journal	Superlattices and Microstructures
Volume	2
Issue number	4
DOIs	https://doi.org/10.1016/0749-6036(86)90054-6
State	Published - 1986

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys",

abstract = "The optical absorption of a-Si:H,F a-Si0.4,Ge0.6:H,F superlattices have been measured over a range of well sublayer widths. The absorption data have been analyzed to yield a defect density per superlattice interface of ≈1010 cm-2. Electron and hole drift mobilities data suggest a transition from scattering dominated transport in states at the top of the barriers for short superlattice periods, to recombination dominated transport at the bottom of the wells for large periods. The data are used to estimate a characteristics scattering length of ≈3 nm in bulk a-Si0.4Ge0.6:H,F.",

author = "J. Kolodzey and R. Schwarz and S. Aljishi and Shen, {D. S.} and I. Campbell and Fauchet, {P. M.} and Lyon, {S. A.} and S. Wagner",

note = "Funding Information: *) Funded by the Electric Power Research Institute under contract RP 2824-2",

year = "1986",

doi = "10.1016/0749-6036(86)90054-6",

language = "English (US)",

volume = "2",

pages = "391--396",

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TY - JOUR

T1 - Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys

AU - Kolodzey, J.

AU - Schwarz, R.

AU - Aljishi, S.

AU - Shen, D. S.

AU - Campbell, I.

AU - Fauchet, P. M.

AU - Lyon, S. A.

AU - Wagner, S.

N1 - Funding Information: *) Funded by the Electric Power Research Institute under contract RP 2824-2

PY - 1986

Y1 - 1986

N2 - The optical absorption of a-Si:H,F a-Si0.4,Ge0.6:H,F superlattices have been measured over a range of well sublayer widths. The absorption data have been analyzed to yield a defect density per superlattice interface of ≈1010 cm-2. Electron and hole drift mobilities data suggest a transition from scattering dominated transport in states at the top of the barriers for short superlattice periods, to recombination dominated transport at the bottom of the wells for large periods. The data are used to estimate a characteristics scattering length of ≈3 nm in bulk a-Si0.4Ge0.6:H,F.

AB - The optical absorption of a-Si:H,F a-Si0.4,Ge0.6:H,F superlattices have been measured over a range of well sublayer widths. The absorption data have been analyzed to yield a defect density per superlattice interface of ≈1010 cm-2. Electron and hole drift mobilities data suggest a transition from scattering dominated transport in states at the top of the barriers for short superlattice periods, to recombination dominated transport at the bottom of the wells for large periods. The data are used to estimate a characteristics scattering length of ≈3 nm in bulk a-Si0.4Ge0.6:H,F.

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U2 - 10.1016/0749-6036(86)90054-6

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JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4

ER -

Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys

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