Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys

J. Kolodzey, R. Schwarz, S. Aljishi, D. S. Shen, I. Campbell, P. M. Fauchet, S. A. Lyon, S. Wagner

Research output: Contribution to journalArticle

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Abstract

The optical absorption of a-Si:H,F a-Si0.4,Ge0.6:H,F superlattices have been measured over a range of well sublayer widths. The absorption data have been analyzed to yield a defect density per superlattice interface of ≈1010 cm-2. Electron and hole drift mobilities data suggest a transition from scattering dominated transport in states at the top of the barriers for short superlattice periods, to recombination dominated transport at the bottom of the wells for large periods. The data are used to estimate a characteristics scattering length of ≈3 nm in bulk a-Si0.4Ge0.6:H,F.

Original languageEnglish (US)
Pages (from-to)391-396
Number of pages6
JournalSuperlattices and Microstructures
Volume2
Issue number4
DOIs
StatePublished - 1986

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Kolodzey, J., Schwarz, R., Aljishi, S., Shen, D. S., Campbell, I., Fauchet, P. M., Lyon, S. A., & Wagner, S. (1986). Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys. Superlattices and Microstructures, 2(4), 391-396. https://doi.org/10.1016/0749-6036(86)90054-6