Carrier kinetics in amorphous semiconducting alloys

Morrel H. Cohen; David Linton Johnson

doi:10.1016/0022-3093(70)90182-1

Carrier kinetics in amorphous semiconducting alloys

Morrel H. Cohen, David Linton Johnson

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The trapping and generation of carriers in amorphous semiconducting alloys has been worked out within the framework of the CFO model of these materials. The roles of charged and neutral traps are considered in detail. The change in the kinetic processes occasioned by diffusive carrier motion instead of propagation with occasional scattering is included as well. The quasi-Fermi level concept is justified in detail. Application is made to the steady state photoconduction.

Original language	English (US)
Pages (from-to)	271-278
Number of pages	8
Journal	Journal of Non-Crystalline Solids
Volume	3
Issue number	3
DOIs	https://doi.org/10.1016/0022-3093(70)90182-1
State	Published - May 1970
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/0022-3093(70)90182-1

Cite this

@article{a25d729ecdab4bc5bd2079e48a7e16bc,

title = "Carrier kinetics in amorphous semiconducting alloys",

abstract = "The trapping and generation of carriers in amorphous semiconducting alloys has been worked out within the framework of the CFO model of these materials. The roles of charged and neutral traps are considered in detail. The change in the kinetic processes occasioned by diffusive carrier motion instead of propagation with occasional scattering is included as well. The quasi-Fermi level concept is justified in detail. Application is made to the steady state photoconduction.",

author = "Cohen, {Morrel H.} and Johnson, {David Linton}",

year = "1970",

month = may,

doi = "10.1016/0022-3093(70)90182-1",

language = "English (US)",

volume = "3",

pages = "271--278",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Carrier kinetics in amorphous semiconducting alloys

AU - Cohen, Morrel H.

AU - Johnson, David Linton

PY - 1970/5

Y1 - 1970/5

N2 - The trapping and generation of carriers in amorphous semiconducting alloys has been worked out within the framework of the CFO model of these materials. The roles of charged and neutral traps are considered in detail. The change in the kinetic processes occasioned by diffusive carrier motion instead of propagation with occasional scattering is included as well. The quasi-Fermi level concept is justified in detail. Application is made to the steady state photoconduction.

AB - The trapping and generation of carriers in amorphous semiconducting alloys has been worked out within the framework of the CFO model of these materials. The roles of charged and neutral traps are considered in detail. The change in the kinetic processes occasioned by diffusive carrier motion instead of propagation with occasional scattering is included as well. The quasi-Fermi level concept is justified in detail. Application is made to the steady state photoconduction.

UR - http://www.scopus.com/inward/record.url?scp=49849107135&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49849107135&partnerID=8YFLogxK

U2 - 10.1016/0022-3093(70)90182-1

DO - 10.1016/0022-3093(70)90182-1

M3 - Article

AN - SCOPUS:49849107135

SN - 0022-3093

VL - 3

SP - 271

EP - 278

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 3

ER -

Carrier kinetics in amorphous semiconducting alloys

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this