Abstract
The trapping and generation of carriers in amorphous semiconducting alloys has been worked out within the framework of the CFO model of these materials. The roles of charged and neutral traps are considered in detail. The change in the kinetic processes occasioned by diffusive carrier motion instead of propagation with occasional scattering is included as well. The quasi-Fermi level concept is justified in detail. Application is made to the steady state photoconduction.
Original language | English (US) |
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Pages (from-to) | 271-278 |
Number of pages | 8 |
Journal | Journal of Non-Crystalline Solids |
Volume | 3 |
Issue number | 3 |
DOIs | |
State | Published - May 1970 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry