Carrier diffusion on atomically flat (1 1 0) GaAs quantum wells

Ji Won Oh; Masahiro Yoshita; Hirotake Itoh; Hidefumi Akiyama; Loren N. Pfeiffer; Ken W. West

doi:10.1016/j.physe.2003.11.106

Carrier diffusion on atomically flat (1 1 0) GaAs quantum wells

Ji Won Oh, Masahiro Yoshita, Hirotake Itoh, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

By means of cleaved-edge overgrowth method with molecular beam epitaxy and growth interrupt annealing, we fabricated (110) GaAs quantum wells having atomically flat interfaces. We introduced characteristic 1-Monolayer(ML)-deep pits and 2-3-ML-high islands on atomically flat interfaces by adding fractional monolayer of GaAs, which are characterized by atomic force microscope. In Photoluminescence(PL) observation with uniform excitation, pits are reproduced as dark triangle images due to higher energy than surroundings, and islands as bright PL spots due to lower energy. With increasing temperature, we observe changes in their shape and enhanced contrast, which are explained by enhanced carrier diffusion length due to significant reduction of interface-roughness scattering.

Original language	English (US)
Pages (from-to)	689-692
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	21
Issue number	2-4
DOIs	https://doi.org/10.1016/j.physe.2003.11.106
State	Published - Mar 2004
Externally published	Yes
Event	Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: Jul 14 2003 → Jul 18 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Keywords

Atomic steps
Atomically flat (1 1 0) surface
Micro PL
Temperature-dependent carrier diffusion

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10.1016/j.physe.2003.11.106

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title = "Carrier diffusion on atomically flat (1 1 0) GaAs quantum wells",

abstract = "By means of cleaved-edge overgrowth method with molecular beam epitaxy and growth interrupt annealing, we fabricated (110) GaAs quantum wells having atomically flat interfaces. We introduced characteristic 1-Monolayer(ML)-deep pits and 2-3-ML-high islands on atomically flat interfaces by adding fractional monolayer of GaAs, which are characterized by atomic force microscope. In Photoluminescence(PL) observation with uniform excitation, pits are reproduced as dark triangle images due to higher energy than surroundings, and islands as bright PL spots due to lower energy. With increasing temperature, we observe changes in their shape and enhanced contrast, which are explained by enhanced carrier diffusion length due to significant reduction of interface-roughness scattering.",

keywords = "Atomic steps, Atomically flat (1 1 0) surface, Micro PL, Temperature-dependent carrier diffusion",

author = "Oh, {Ji Won} and Masahiro Yoshita and Hirotake Itoh and Hidefumi Akiyama and Pfeiffer, {Loren N.} and West, {Ken W.}",

year = "2004",

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doi = "10.1016/j.physe.2003.11.106",

language = "English (US)",

volume = "21",

pages = "689--692",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "2-4",

note = "Proceedings of the Eleventh International Conference on Modulation (MSS11) ; Conference date: 14-07-2003 Through 18-07-2003",

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TY - JOUR

T1 - Carrier diffusion on atomically flat (1 1 0) GaAs quantum wells

AU - Oh, Ji Won

AU - Yoshita, Masahiro

AU - Itoh, Hirotake

AU - Akiyama, Hidefumi

AU - Pfeiffer, Loren N.

AU - West, Ken W.

PY - 2004/3

Y1 - 2004/3

N2 - By means of cleaved-edge overgrowth method with molecular beam epitaxy and growth interrupt annealing, we fabricated (110) GaAs quantum wells having atomically flat interfaces. We introduced characteristic 1-Monolayer(ML)-deep pits and 2-3-ML-high islands on atomically flat interfaces by adding fractional monolayer of GaAs, which are characterized by atomic force microscope. In Photoluminescence(PL) observation with uniform excitation, pits are reproduced as dark triangle images due to higher energy than surroundings, and islands as bright PL spots due to lower energy. With increasing temperature, we observe changes in their shape and enhanced contrast, which are explained by enhanced carrier diffusion length due to significant reduction of interface-roughness scattering.

AB - By means of cleaved-edge overgrowth method with molecular beam epitaxy and growth interrupt annealing, we fabricated (110) GaAs quantum wells having atomically flat interfaces. We introduced characteristic 1-Monolayer(ML)-deep pits and 2-3-ML-high islands on atomically flat interfaces by adding fractional monolayer of GaAs, which are characterized by atomic force microscope. In Photoluminescence(PL) observation with uniform excitation, pits are reproduced as dark triangle images due to higher energy than surroundings, and islands as bright PL spots due to lower energy. With increasing temperature, we observe changes in their shape and enhanced contrast, which are explained by enhanced carrier diffusion length due to significant reduction of interface-roughness scattering.

KW - Atomic steps

KW - Atomically flat (1 1 0) surface

KW - Micro PL

KW - Temperature-dependent carrier diffusion

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U2 - 10.1016/j.physe.2003.11.106

DO - 10.1016/j.physe.2003.11.106

M3 - Conference article

AN - SCOPUS:1642395297

SN - 1386-9477

VL - 21

SP - 689

EP - 692

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2-4

T2 - Proceedings of the Eleventh International Conference on Modulation (MSS11)

Y2 - 14 July 2003 through 18 July 2003

ER -

Carrier diffusion on atomically flat (1 1 0) GaAs quantum wells

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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