Capping-induced suppression of annealing effects on Ga1-xMnxAs epilayers

M. B. Stone, K. C. Ku, S. J. Potashnik, B. L. Sheu, N. Samarth, P. Schiffer

Research output: Contribution to journalArticlepeer-review

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The effects of annealing on Ga1-xMnxAs epilayers that are capped by a thin layer of GaAs were studied. It was found that the presence of the capping layer significantly suppresses TC in the as-grown samples and also reduces the physical changes induced by annealing. The effect on annealing increased with the capping layer thickness, and a 10 monolayer (ML) cap almost completely eliminated the effects of annealing.

Original languageEnglish (US)
Pages (from-to)4568-4570
Number of pages3
JournalApplied Physics Letters
Issue number22
StatePublished - Dec 1 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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