Capacitance-voltage measurements in amorphous Schottky barriers

A theory for the capacitance of junctions (in particular, Schottky barriers) made from amorphous semiconductors is presented. It is emphasized that this theory is very different from the usual theory used for crystalline semiconductors. A self-consistent scheme to use the capacitance results to find the density of localized states in the band gap of amorphous semiconductors is developed. This method provides a strong complement to the field-effect technique for finding the density of states. Theoretical calculations are presented to illustrate the procedure and some of its advantages over the field-effect method. The relation to earlier work is discussed.