Capacitance-voltage measurements in amorphous Schottky barriers

Jasprit Singh, Morrel H. Cohen

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

A theory for the capacitance of junctions (in particular, Schottky barriers) made from amorphous semiconductors is presented. It is emphasized that this theory is very different from the usual theory used for crystalline semiconductors. A self-consistent scheme to use the capacitance results to find the density of localized states in the band gap of amorphous semiconductors is developed. This method provides a strong complement to the field-effect technique for finding the density of states. Theoretical calculations are presented to illustrate the procedure and some of its advantages over the field-effect method. The relation to earlier work is discussed.

Original languageEnglish (US)
Pages (from-to)413-418
Number of pages6
JournalJournal of Applied Physics
Volume51
Issue number1
DOIs
StatePublished - Dec 1 1980
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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