Can electrical deactivation of highly Si-doped GaAs be explained by autocompensation

S. Schuppler; D. L. Adler; L. N. Pfeiffer; K. W. West; E. E. Chaban; P. H. Citrin

doi:10.1063/1.110500

Can electrical deactivation of highly Si-doped GaAs be explained by autocompensation

S. Schuppler, D. L. Adler, L. N. Pfeiffer, K. W. West, E. E. Chaban, P. H. Citrin

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Using near-edge x-ray absorption fine structure, the first experimental determination of Si atom concentrations occupying As sites in Si-doped GaAs (100) is reported. The measurements reveal that at high doping levels (≳10¹⁹ cm^-3) in molecular-beam-epitaxy-grown samples, the number of such p-type Si atoms is insufficient to account for the observed large reduction of free-carriers.

Original language	English (US)
Pages (from-to)	2357-2359
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	17
DOIs	https://doi.org/10.1063/1.110500
State	Published - 1993
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.110500

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title = "Can electrical deactivation of highly Si-doped GaAs be explained by autocompensation",

abstract = "Using near-edge x-ray absorption fine structure, the first experimental determination of Si atom concentrations occupying As sites in Si-doped GaAs (100) is reported. The measurements reveal that at high doping levels (≳1019 cm-3) in molecular-beam-epitaxy-grown samples, the number of such p-type Si atoms is insufficient to account for the observed large reduction of free-carriers.",

author = "S. Schuppler and Adler, {D. L.} and Pfeiffer, {L. N.} and West, {K. W.} and Chaban, {E. E.} and Citrin, {P. H.}",

year = "1993",

doi = "10.1063/1.110500",

language = "English (US)",

volume = "63",

pages = "2357--2359",

journal = "Applied Physics Letters",

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AU - Schuppler, S.

AU - Adler, D. L.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Chaban, E. E.

AU - Citrin, P. H.

PY - 1993

Y1 - 1993

N2 - Using near-edge x-ray absorption fine structure, the first experimental determination of Si atom concentrations occupying As sites in Si-doped GaAs (100) is reported. The measurements reveal that at high doping levels (≳1019 cm-3) in molecular-beam-epitaxy-grown samples, the number of such p-type Si atoms is insufficient to account for the observed large reduction of free-carriers.

AB - Using near-edge x-ray absorption fine structure, the first experimental determination of Si atom concentrations occupying As sites in Si-doped GaAs (100) is reported. The measurements reveal that at high doping levels (≳1019 cm-3) in molecular-beam-epitaxy-grown samples, the number of such p-type Si atoms is insufficient to account for the observed large reduction of free-carriers.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Can electrical deactivation of highly Si-doped GaAs be explained by autocompensation

Abstract

All Science Journal Classification (ASJC) codes

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