The strain field distributions and band lineups of zero-dimensional and one-dimensional strained pseudomorphic semiconductor particles inside a three-dimensional matrix of another semiconductor have been studied. The resulting strain in the particle and the matrix leads to band alignments considerably different from that in the conventional two-dimensional (2D) pseudomorphic growth case. The models are first applied to an ideal spherical and cylindrical (Formula presented) particle in a large Si matrix. In contrast to the 2D case, the band alignments for both structures are predicted to be strongly type II, where the conduction-band edge and the valence-band edge of the Si matrix are both significantly lower than those in the (Formula presented) inclusion, respectively. Band lineups and the lowest electron-heavy-hole transition energies of a pseudomorphic V-groove (Formula presented) quantum wire inside a large Si matrix have been calculated numerically for different size structures. The photoluminescence energies of a large (Formula presented) V-groove structure on Si will be lower than those of conventional 2D strained (Formula presented) for similar Ge contents.
|Original language||English (US)|
|Number of pages||8|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jan 1 1997|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics