Buried heterostructure quantum cascade lasers

Mattias Beck, Jérôme Faist, Claire Gmachl, Federico Capasso, Deborah L. Sivco, James N. Baillargeon, Alfred Y. Cho

Research output: Contribution to journalConference article

11 Scopus citations

Abstract

We report on the fabrication and characterization of buried heterostructure quantum cascade (BH-QC) lasers. The buried heterostructure is formed by regrowth of InP lateral on the side walls and on top of the InAlAs/InGaAs laser structure by molecular beam epitaxy (MBE) after in situ surface cleaning. Thermal Cl2 etching is applied to the etched laser structure to remove the native oxides of the ternaries prior to regrowth of InP. Buried heterostructure QC lasers demonstrated excellent performances with lower threshold current densities (as low as 4.5 kA/cm2 at T=300K) and higher slope efficiencies that we attribute to lower waveguide losses and a better heat dissipation.

Original languageEnglish (US)
Pages (from-to)231-236
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3284
DOIs
StatePublished - Dec 1 1998
Externally publishedYes
EventIn-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II - San Jose, CA, United States
Duration: Jan 26 1998Jan 28 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Keywords

  • Buried heterostructure
  • Molecular beam epitaxy
  • Quantum cascade laser

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    Beck, M., Faist, J., Gmachl, C., Capasso, F., Sivco, D. L., Baillargeon, J. N., & Cho, A. Y. (1998). Buried heterostructure quantum cascade lasers. Proceedings of SPIE - The International Society for Optical Engineering, 3284, 231-236. https://doi.org/10.1117/12.304449