Buried heterostructure quantum cascade lasers

Mattias Beck; Jérôme Faist; Claire Gmachl; Federico Capasso; Deborah L. Sivco; James N. Baillargeon; Alfred Y. Cho

doi:10.1117/12.304449

Buried heterostructure quantum cascade lasers

Mattias Beck, Jérôme Faist, Claire Gmachl, Federico Capasso, Deborah L. Sivco, James N. Baillargeon, Alfred Y. Cho

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

We report on the fabrication and characterization of buried heterostructure quantum cascade (BH-QC) lasers. The buried heterostructure is formed by regrowth of InP lateral on the side walls and on top of the InAlAs/InGaAs laser structure by molecular beam epitaxy (MBE) after in situ surface cleaning. Thermal Cl₂ etching is applied to the etched laser structure to remove the native oxides of the ternaries prior to regrowth of InP. Buried heterostructure QC lasers demonstrated excellent performances with lower threshold current densities (as low as 4.5 kA/cm² at T=300K) and higher slope efficiencies that we attribute to lower waveguide losses and a better heat dissipation.

Original language	English (US)
Pages (from-to)	231-236
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3284
DOIs	https://doi.org/10.1117/12.304449
State	Published - 1998
Externally published	Yes
Event	In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II - San Jose, CA, United States Duration: Jan 26 1998 → Jan 28 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

Buried heterostructure
Molecular beam epitaxy
Quantum cascade laser

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10.1117/12.304449

Cite this

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title = "Buried heterostructure quantum cascade lasers",

abstract = "We report on the fabrication and characterization of buried heterostructure quantum cascade (BH-QC) lasers. The buried heterostructure is formed by regrowth of InP lateral on the side walls and on top of the InAlAs/InGaAs laser structure by molecular beam epitaxy (MBE) after in situ surface cleaning. Thermal Cl2 etching is applied to the etched laser structure to remove the native oxides of the ternaries prior to regrowth of InP. Buried heterostructure QC lasers demonstrated excellent performances with lower threshold current densities (as low as 4.5 kA/cm2 at T=300K) and higher slope efficiencies that we attribute to lower waveguide losses and a better heat dissipation.",

keywords = "Buried heterostructure, Molecular beam epitaxy, Quantum cascade laser",

author = "Mattias Beck and J{\'e}r{\^o}me Faist and Claire Gmachl and Federico Capasso and Sivco, {Deborah L.} and Baillargeon, {James N.} and Cho, {Alfred Y.}",

note = "Copyright: Copyright 2005 Elsevier Science B.V., Amsterdam. All rights reserved.; In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II ; Conference date: 26-01-1998 Through 28-01-1998",

year = "1998",

doi = "10.1117/12.304449",

language = "English (US)",

volume = "3284",

pages = "231--236",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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TY - JOUR

T1 - Buried heterostructure quantum cascade lasers

AU - Beck, Mattias

AU - Faist, Jérôme

AU - Gmachl, Claire

AU - Capasso, Federico

AU - Sivco, Deborah L.

AU - Baillargeon, James N.

AU - Cho, Alfred Y.

PY - 1998

Y1 - 1998

N2 - We report on the fabrication and characterization of buried heterostructure quantum cascade (BH-QC) lasers. The buried heterostructure is formed by regrowth of InP lateral on the side walls and on top of the InAlAs/InGaAs laser structure by molecular beam epitaxy (MBE) after in situ surface cleaning. Thermal Cl2 etching is applied to the etched laser structure to remove the native oxides of the ternaries prior to regrowth of InP. Buried heterostructure QC lasers demonstrated excellent performances with lower threshold current densities (as low as 4.5 kA/cm2 at T=300K) and higher slope efficiencies that we attribute to lower waveguide losses and a better heat dissipation.

AB - We report on the fabrication and characterization of buried heterostructure quantum cascade (BH-QC) lasers. The buried heterostructure is formed by regrowth of InP lateral on the side walls and on top of the InAlAs/InGaAs laser structure by molecular beam epitaxy (MBE) after in situ surface cleaning. Thermal Cl2 etching is applied to the etched laser structure to remove the native oxides of the ternaries prior to regrowth of InP. Buried heterostructure QC lasers demonstrated excellent performances with lower threshold current densities (as low as 4.5 kA/cm2 at T=300K) and higher slope efficiencies that we attribute to lower waveguide losses and a better heat dissipation.

KW - Buried heterostructure

KW - Molecular beam epitaxy

KW - Quantum cascade laser

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DO - 10.1117/12.304449

M3 - Conference article

AN - SCOPUS:0032224183

SN - 0277-786X

VL - 3284

SP - 231

EP - 236

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II

Y2 - 26 January 1998 through 28 January 1998

ER -

Buried heterostructure quantum cascade lasers

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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