Buckling suppression of SiGe islands on compliant substrates

Haizhou Yin; R. Huang; K. D. Hobart; J. Liang; Z. Suo; S. R. Shieh; T. S. Duffy; F. J. Kub; J. C. Sturm

doi:10.1063/1.1621069

Buckling suppression of SiGe islands on compliant substrates

Haizhou Yin, R. Huang, K. D. Hobart, J. Liang, Z. Suo, S. R. Shieh, T. S. Duffy, F. J. Kub, J. C. Sturm

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30 Scopus citations

Abstract

The buckling suppression of SiGe islands on borophosphorosilicate glass was discussed. Both amorphous silicon dioxide (SiO ₂) and epitaxial silicon caps were investigated. It was found that the germanium diffusion in the SiGe/Si structure took place during relaxation anneals and lowered the germanium fraction of the final fully relaxed SiGe film.

Original language	English (US)
Pages (from-to)	6875-6882
Number of pages	8
Journal	Journal of Applied Physics
Volume	94
Issue number	10
DOIs	https://doi.org/10.1063/1.1621069
State	Published - Nov 15 2003

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1621069

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title = "Buckling suppression of SiGe islands on compliant substrates",

abstract = "The buckling suppression of SiGe islands on borophosphorosilicate glass was discussed. Both amorphous silicon dioxide (SiO 2) and epitaxial silicon caps were investigated. It was found that the germanium diffusion in the SiGe/Si structure took place during relaxation anneals and lowered the germanium fraction of the final fully relaxed SiGe film.",

author = "Haizhou Yin and R. Huang and Hobart, {K. D.} and J. Liang and Z. Suo and Shieh, {S. R.} and Duffy, {T. S.} and Kub, {F. J.} and Sturm, {J. C.}",

year = "2003",

month = nov,

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doi = "10.1063/1.1621069",

language = "English (US)",

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journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Buckling suppression of SiGe islands on compliant substrates

AU - Yin, Haizhou

AU - Huang, R.

AU - Hobart, K. D.

AU - Liang, J.

AU - Suo, Z.

AU - Shieh, S. R.

AU - Duffy, T. S.

AU - Kub, F. J.

AU - Sturm, J. C.

PY - 2003/11/15

Y1 - 2003/11/15

N2 - The buckling suppression of SiGe islands on borophosphorosilicate glass was discussed. Both amorphous silicon dioxide (SiO 2) and epitaxial silicon caps were investigated. It was found that the germanium diffusion in the SiGe/Si structure took place during relaxation anneals and lowered the germanium fraction of the final fully relaxed SiGe film.

AB - The buckling suppression of SiGe islands on borophosphorosilicate glass was discussed. Both amorphous silicon dioxide (SiO 2) and epitaxial silicon caps were investigated. It was found that the germanium diffusion in the SiGe/Si structure took place during relaxation anneals and lowered the germanium fraction of the final fully relaxed SiGe film.

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U2 - 10.1063/1.1621069

DO - 10.1063/1.1621069

M3 - Article

AN - SCOPUS:0345377500

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SP - 6875

EP - 6882

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Buckling suppression of SiGe islands on compliant substrates

Abstract

All Science Journal Classification (ASJC) codes

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