The buckling suppression of SiGe islands on borophosphorosilicate glass was discussed. Both amorphous silicon dioxide (SiO 2) and epitaxial silicon caps were investigated. It was found that the germanium diffusion in the SiGe/Si structure took place during relaxation anneals and lowered the germanium fraction of the final fully relaxed SiGe film.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Applied Physics|
|State||Published - Nov 15 2003|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)