Buckling suppression of SiGe islands on compliant substrates

Haizhou Yin, R. Huang, K. D. Hobart, J. Liang, Z. Suo, S. R. Shieh, T. S. Duffy, F. J. Kub, J. C. Sturm

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Abstract

The buckling suppression of SiGe islands on borophosphorosilicate glass was discussed. Both amorphous silicon dioxide (SiO 2) and epitaxial silicon caps were investigated. It was found that the germanium diffusion in the SiGe/Si structure took place during relaxation anneals and lowered the germanium fraction of the final fully relaxed SiGe film.

Original languageEnglish (US)
Pages (from-to)6875-6882
Number of pages8
JournalJournal of Applied Physics
Volume94
Issue number10
DOIs
StatePublished - Nov 15 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Yin, H., Huang, R., Hobart, K. D., Liang, J., Suo, Z., Shieh, S. R., Duffy, T. S., Kub, F. J., & Sturm, J. C. (2003). Buckling suppression of SiGe islands on compliant substrates. Journal of Applied Physics, 94(10), 6875-6882. https://doi.org/10.1063/1.1621069