The buckling suppression of SiGe islands on borophosphorosilicate glass was discussed. Both amorphous silicon dioxide (SiO 2) and epitaxial silicon caps were investigated. It was found that the germanium diffusion in the SiGe/Si structure took place during relaxation anneals and lowered the germanium fraction of the final fully relaxed SiGe film.
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy