Abstract
Recently, high-order sideband polarimetry has been established as an experimental method that links the polarization of sidebands to an interference of Bloch waves. However, the robustness of sideband polarizations to increasing dephasing remains to be explored. Here, we investigate the dependence of high-order sideband generation in bulk gallium arsenide on dephasing by tuning temperature. We find that the intensities of the sidebands, but not their polarizations, depend strongly on temperature. Using our polarimetry method, we are able to isolate the contributions of electron-heavy hole (HH) and electron-light hole (LH) pairs to sideband intensities, and separately extract the nonequilibrium dephasing coefficients associated with the longitudinal optical (LO) phonons and acoustic (A) phonons for each species of electron-hole pair. We find that ΓHH,A=6.1±1.6μeV/K, ΓLH,A<1.5μeV/K, ΓHH,LO=14±3meV, and ΓLH,LO=30±3meV.
| Original language | English (US) |
|---|---|
| Article number | 195205 |
| Journal | Physical Review B |
| Volume | 108 |
| Issue number | 19 |
| DOIs | |
| State | Published - Nov 15 2023 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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