Bound-to-bound intersubband absorption in the valence band of modulation-doped GaAs quantum wells with digitally alloyed AlGaAs barriers was studied in the midinfrared wavelength range. A high-purity solid carbon source was used for the p -type doping. Strong narrow absorption peaks due to heavy-to-heavy hole transitions are observed with out-of-plane polarized light, and weaker broader features with in-plane polarized light. The heavy-to-heavy hole transition energy spans the spectral range between 206 to 126 meV as the quantum well width is increased from 25 to 45 Å. The experimental results are found to be in agreement with calculations of a six-band k·p model taking into account the full band structure of the digital alloy.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Aug 29 2005|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)