Bound exciton lifetimes for acceptors in Si

S. A. Lyon; G. C. Osbourn; D. L. Smith; T. C. McGill

doi:10.1016/0038-1098(77)91000-6

Bound exciton lifetimes for acceptors in Si

S. A. Lyon
, G. C. Osbourn
, D. L. Smith
, T. C. McGill

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We present measurements of the bound exciton lifetimes for the four common acceptors in Si and for the first two bound multiple exciton complexes in Si:Ga and Si:Al. We present a calculation of the Auger transition rate for the acceptor bound excitons in Si which accounts for the observed lifetimes and their dependence on the acceptor type.

Original language	English (US)
Pages (from-to)	425-428
Number of pages	4
Journal	Solid State Communications
Volume	23
Issue number	7
DOIs	https://doi.org/10.1016/0038-1098(77)91000-6
State	Published - Aug 1977
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(77)91000-6

Cite this

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title = "Bound exciton lifetimes for acceptors in Si",

abstract = "We present measurements of the bound exciton lifetimes for the four common acceptors in Si and for the first two bound multiple exciton complexes in Si:Ga and Si:Al. We present a calculation of the Auger transition rate for the acceptor bound excitons in Si which accounts for the observed lifetimes and their dependence on the acceptor type.",

author = "Lyon, \{S. A.\} and Osbourn, \{G. C.\} and Smith, \{D. L.\} and McGill, \{T. C.\}",

note = "Funding Information: Work supported in part by AFOSR under Grant No. 77—3216. Alfred P. Sloan Foundation Fellow.",

year = "1977",

month = aug,

doi = "10.1016/0038-1098(77)91000-6",

language = "English (US)",

volume = "23",

pages = "425--428",

journal = "Solid State Communications",

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T1 - Bound exciton lifetimes for acceptors in Si

AU - Lyon, S. A.

AU - Osbourn, G. C.

AU - Smith, D. L.

AU - McGill, T. C.

N1 - Funding Information: Work supported in part by AFOSR under Grant No. 77—3216. Alfred P. Sloan Foundation Fellow.

PY - 1977/8

Y1 - 1977/8

N2 - We present measurements of the bound exciton lifetimes for the four common acceptors in Si and for the first two bound multiple exciton complexes in Si:Ga and Si:Al. We present a calculation of the Auger transition rate for the acceptor bound excitons in Si which accounts for the observed lifetimes and their dependence on the acceptor type.

AB - We present measurements of the bound exciton lifetimes for the four common acceptors in Si and for the first two bound multiple exciton complexes in Si:Ga and Si:Al. We present a calculation of the Auger transition rate for the acceptor bound excitons in Si which accounts for the observed lifetimes and their dependence on the acceptor type.

UR - https://www.scopus.com/pages/publications/0007961157

UR - https://www.scopus.com/pages/publications/0007961157#tab=citedBy

U2 - 10.1016/0038-1098(77)91000-6

DO - 10.1016/0038-1098(77)91000-6

M3 - Article

AN - SCOPUS:0007961157

SN - 0038-1098

VL - 23

SP - 425

EP - 428

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

Bound exciton lifetimes for acceptors in Si

Abstract

All Science Journal Classification (ASJC) codes

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