BOUND EXCITON LIFETIMES FOR ACCEPTORS IN Si.

S. A. Lyon, G. C. Osbourn, D. L. Smith, T. C. McGill

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Measurements are presented of the bound exciton lifetimes for the four common acceptors in Si and for the first two bound multiple exciton complexes in Si:Ga and Si:Al. The Auger transition rate was calculated for the acceptor bound excitons in Si which accounts for the observed lifetimes and their dependence on the acceptor type.

Original languageEnglish (US)
Pages (from-to)425-428
Number of pages4
JournalSolid State Communications
StatePublished - Jan 1 2017

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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