Measurements are presented of the bound exciton lifetimes for the four common acceptors in Si and for the first two bound multiple exciton complexes in Si:Ga and Si:Al. The Auger transition rate was calculated for the acceptor bound excitons in Si which accounts for the observed lifetimes and their dependence on the acceptor type.
|Original language||English (US)|
|Number of pages||4|
|Journal||Solid State Communications|
|State||Published - Jan 1 2017|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry