Bound exciton lifetimes for acceptors in Si

S. A. Lyon, G. C. Osbourn, D. L. Smith, T. C. McGill

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

We present measurements of the bound exciton lifetimes for the four common acceptors in Si and for the first two bound multiple exciton complexes in Si:Ga and Si:Al. We present a calculation of the Auger transition rate for the acceptor bound excitons in Si which accounts for the observed lifetimes and their dependence on the acceptor type.

Original languageEnglish (US)
Pages (from-to)425-428
Number of pages4
JournalSolid State Communications
Volume23
Issue number7
DOIs
StatePublished - Aug 1977
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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