We present measurements of the bound exciton lifetimes for the four common acceptors in Si and for the first two bound multiple exciton complexes in Si:Ga and Si:Al. We present a calculation of the Auger transition rate for the acceptor bound excitons in Si which accounts for the observed lifetimes and their dependence on the acceptor type.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry