Boron segregation in single-crystal Si1-x-yGexC y and Si1-yCy alloys

E. J. Stewart, M. S. Carroll, J. C. Sturm

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Abstract

It has been reported that boron segregates to single-crystal Si 1-xGex layers from silicon during thermal anneals. In this work, we find that boron segregates even more strongly into single-crystal Si1-x-yGexCy, as has been previously reported for polycrystalline films. This effect is also observed in single-crystal Si1-yCy. Segregation coefficients range from 1.7 to 2.9 for annealing temperatures in the 800-850°C range. In a Si 1-yCy layer with 0.4% carbon, most of the segregation is reversible if the carbon is removed by an oxidation-enhanced out-diffusion process. This argues against the formation of immobile B-C defects as the driving force for the segregation. Gradients of interstitial silicon atoms, created by high concentrations of substitutional carbon, are presented as a driving force capable of causing the segregation seen in the experiments.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume152
Issue number6
DOIs
StatePublished - Aug 1 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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