Boron segregation and out-diffusion in single-crystal Si1-yCy

E. J. Stewart; J. C. Sturm

doi:10.1557/proc-765-d6.18

Boron segregation and out-diffusion in single-crystal Si_1-yC_y

E. J. Stewart, J. C. Sturm

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Boron segregation and its effect on carbon diffusion is studied in single-crystal Si_1-yC_y. We find that boron segregates from silicon to Si_0.996C_0.004 at a level m=[B]_SiC/[B]_Si = 1.7 during a 2 hour, 850°C anneal in N₂. After this anneal, if most of the carbon is then removed from the Si_1-yC_y layer (via an oxidation-enhanced out-diffusion process), most of the boron segregation is removed as well. This argues against immobile B-C defects as the predominant mechanism driving the segregation. Boron is shown to increase carbon diffusion during the N₂ anneal, but also appears to enhance carbon precipitation during a subsequent oxidation.

Original language	English (US)
Pages (from-to)	223-228
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	765
DOIs	https://doi.org/10.1557/proc-765-d6.18
State	Published - 2003
Event	MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS CMOS Front-End Materials and Process Technology - San Francisco, CA, United States Duration: Apr 22 2003 → Apr 24 2003

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Boron segregation and out-diffusion in single-crystal Si1-yCy",

abstract = "Boron segregation and its effect on carbon diffusion is studied in single-crystal Si1-yCy. We find that boron segregates from silicon to Si0.996C0.004 at a level m=[B]SiC/[B]Si = 1.7 during a 2 hour, 850°C anneal in N2. After this anneal, if most of the carbon is then removed from the Si1-yCy layer (via an oxidation-enhanced out-diffusion process), most of the boron segregation is removed as well. This argues against immobile B-C defects as the predominant mechanism driving the segregation. Boron is shown to increase carbon diffusion during the N2 anneal, but also appears to enhance carbon precipitation during a subsequent oxidation.",

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year = "2003",

doi = "10.1557/proc-765-d6.18",

language = "English (US)",

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pages = "223--228",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS CMOS Front-End Materials and Process Technology ; Conference date: 22-04-2003 Through 24-04-2003",

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TY - JOUR

T1 - Boron segregation and out-diffusion in single-crystal Si1-yCy

AU - Stewart, E. J.

AU - Sturm, J. C.

PY - 2003

Y1 - 2003

N2 - Boron segregation and its effect on carbon diffusion is studied in single-crystal Si1-yCy. We find that boron segregates from silicon to Si0.996C0.004 at a level m=[B]SiC/[B]Si = 1.7 during a 2 hour, 850°C anneal in N2. After this anneal, if most of the carbon is then removed from the Si1-yCy layer (via an oxidation-enhanced out-diffusion process), most of the boron segregation is removed as well. This argues against immobile B-C defects as the predominant mechanism driving the segregation. Boron is shown to increase carbon diffusion during the N2 anneal, but also appears to enhance carbon precipitation during a subsequent oxidation.

AB - Boron segregation and its effect on carbon diffusion is studied in single-crystal Si1-yCy. We find that boron segregates from silicon to Si0.996C0.004 at a level m=[B]SiC/[B]Si = 1.7 during a 2 hour, 850°C anneal in N2. After this anneal, if most of the carbon is then removed from the Si1-yCy layer (via an oxidation-enhanced out-diffusion process), most of the boron segregation is removed as well. This argues against immobile B-C defects as the predominant mechanism driving the segregation. Boron is shown to increase carbon diffusion during the N2 anneal, but also appears to enhance carbon precipitation during a subsequent oxidation.

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U2 - 10.1557/proc-765-d6.18

DO - 10.1557/proc-765-d6.18

M3 - Conference article

AN - SCOPUS:0242409640

SN - 0272-9172

VL - 765

SP - 223

EP - 228

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS CMOS Front-End Materials and Process Technology

Y2 - 22 April 2003 through 24 April 2003

ER -

Boron segregation and out-diffusion in single-crystal Si_1-yC_y

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