Boron segregation and out-diffusion in single-crystal Si1-yCy

E. J. Stewart, J. C. Sturm

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Boron segregation and its effect on carbon diffusion is studied in single-crystal Si1-yCy. We find that boron segregates from silicon to Si0.996C0.004 at a level m=[B]SiC/[B]Si = 1.7 during a 2 hour, 850°C anneal in N2. After this anneal, if most of the carbon is then removed from the Si1-yCy layer (via an oxidation-enhanced out-diffusion process), most of the boron segregation is removed as well. This argues against immobile B-C defects as the predominant mechanism driving the segregation. Boron is shown to increase carbon diffusion during the N2 anneal, but also appears to enhance carbon precipitation during a subsequent oxidation.

Original languageEnglish (US)
Pages (from-to)223-228
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2003
EventMATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS CMOS Front-End Materials and Process Technology - San Francisco, CA, United States
Duration: Apr 22 2003Apr 24 2003

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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