Boron segregation and electrical properties in polycrystalline Si 1-x-yGe xC y and Si 1-yC y alloys

E. J. Stewart; M. S. Carroll; J. C. Sturm

doi:10.1063/1.1649452

Boron segregation and electrical properties in polycrystalline Si _1-x-yGe _xC _y and Si _1-yC _y alloys

E. J. Stewart, M. S. Carroll, J. C. Sturm

Research output: Contribution to journal › Article › peer-review

Abstract

A study of boron segregation to polycrystalline Si _1-x-yGe _xC _y from polysilicon during thermal annealing was carried out. The effect of carbon on the electrical properties of polycrystalline Si and Si _1-xGe _x was investigated to examine the carbon-related defects. There was no significant loss in mobility was found at low carbon concentrations for polycrystalline Si _1-x-yGe _xC _y layers. At higher carbon concentrations significant reductions were observed. The stability with electrical properties with annealing indicated that boron atoms do not deactivate during anneals due to carbon-related defects.

Original language	English (US)
Pages (from-to)	4029-4035
Number of pages	7
Journal	Journal of Applied Physics
Volume	95
Issue number	8
DOIs	https://doi.org/10.1063/1.1649452
State	Published - Apr 15 2004

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1063/1.1649452

Cite this

@article{d9a0ac34545344ffb7a83e3d8d89e987,

title = "Boron segregation and electrical properties in polycrystalline Si 1-x-yGe xC y and Si 1-yC y alloys",

abstract = "A study of boron segregation to polycrystalline Si 1-x-yGe xC y from polysilicon during thermal annealing was carried out. The effect of carbon on the electrical properties of polycrystalline Si and Si 1-xGe x was investigated to examine the carbon-related defects. There was no significant loss in mobility was found at low carbon concentrations for polycrystalline Si 1-x-yGe xC y layers. At higher carbon concentrations significant reductions were observed. The stability with electrical properties with annealing indicated that boron atoms do not deactivate during anneals due to carbon-related defects.",

author = "Stewart, \{E. J.\} and Carroll, \{M. S.\} and Sturm, \{J. C.\}",

year = "2004",

month = apr,

day = "15",

doi = "10.1063/1.1649452",

language = "English (US)",

volume = "95",

pages = "4029--4035",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Boron segregation and electrical properties in polycrystalline Si 1-x-yGe xC y and Si 1-yC y alloys

AU - Stewart, E. J.

AU - Carroll, M. S.

AU - Sturm, J. C.

PY - 2004/4/15

Y1 - 2004/4/15

N2 - A study of boron segregation to polycrystalline Si 1-x-yGe xC y from polysilicon during thermal annealing was carried out. The effect of carbon on the electrical properties of polycrystalline Si and Si 1-xGe x was investigated to examine the carbon-related defects. There was no significant loss in mobility was found at low carbon concentrations for polycrystalline Si 1-x-yGe xC y layers. At higher carbon concentrations significant reductions were observed. The stability with electrical properties with annealing indicated that boron atoms do not deactivate during anneals due to carbon-related defects.

AB - A study of boron segregation to polycrystalline Si 1-x-yGe xC y from polysilicon during thermal annealing was carried out. The effect of carbon on the electrical properties of polycrystalline Si and Si 1-xGe x was investigated to examine the carbon-related defects. There was no significant loss in mobility was found at low carbon concentrations for polycrystalline Si 1-x-yGe xC y layers. At higher carbon concentrations significant reductions were observed. The stability with electrical properties with annealing indicated that boron atoms do not deactivate during anneals due to carbon-related defects.

UR - https://www.scopus.com/pages/publications/2342485136

UR - https://www.scopus.com/inward/citedby.url?scp=2342485136&partnerID=8YFLogxK

U2 - 10.1063/1.1649452

DO - 10.1063/1.1649452

M3 - Article

AN - SCOPUS:2342485136

SN - 0021-8979

VL - 95

SP - 4029

EP - 4035

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Boron segregation and electrical properties in polycrystalline Si _1-x-yGe _xC _y and Si _1-yC _y alloys

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this