Boron segregation and electrical properties in polycrystalline Si 1-x-yGe xC y and Si 1-yC y alloys

E. J. Stewart, M. S. Carroll, James Christopher Sturm

Research output: Contribution to journalArticle

Abstract

A study of boron segregation to polycrystalline Si 1-x-yGe xC y from polysilicon during thermal annealing was carried out. The effect of carbon on the electrical properties of polycrystalline Si and Si 1-xGe x was investigated to examine the carbon-related defects. There was no significant loss in mobility was found at low carbon concentrations for polycrystalline Si 1-x-yGe xC y layers. At higher carbon concentrations significant reductions were observed. The stability with electrical properties with annealing indicated that boron atoms do not deactivate during anneals due to carbon-related defects.

Original languageEnglish (US)
Pages (from-to)4029-4035
Number of pages7
JournalJournal of Applied Physics
Volume95
Issue number8
DOIs
StatePublished - Apr 15 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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