Abstract
A study of boron segregation to polycrystalline Si 1-x-yGe xC y from polysilicon during thermal annealing was carried out. The effect of carbon on the electrical properties of polycrystalline Si and Si 1-xGe x was investigated to examine the carbon-related defects. There was no significant loss in mobility was found at low carbon concentrations for polycrystalline Si 1-x-yGe xC y layers. At higher carbon concentrations significant reductions were observed. The stability with electrical properties with annealing indicated that boron atoms do not deactivate during anneals due to carbon-related defects.
Original language | English (US) |
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Pages (from-to) | 4029-4035 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 95 |
Issue number | 8 |
DOIs | |
State | Published - Apr 15 2004 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy