A study of boron segregation to polycrystalline Si 1-x-yGe xC y from polysilicon during thermal annealing was carried out. The effect of carbon on the electrical properties of polycrystalline Si and Si 1-xGe x was investigated to examine the carbon-related defects. There was no significant loss in mobility was found at low carbon concentrations for polycrystalline Si 1-x-yGe xC y layers. At higher carbon concentrations significant reductions were observed. The stability with electrical properties with annealing indicated that boron atoms do not deactivate during anneals due to carbon-related defects.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)