Bismuth titanium indium antimony oxide: A low-temperature-coefficient, high-K dielectric material

R. J. Cava; J. J. Krajewski; Y. L. Qin; H. W. Zandbergen

doi:10.1557/JMR.2000.0384

Bismuth titanium indium antimony oxide: A low-temperature-coefficient, high-K dielectric material

R. J. Cava, J. J. Krajewski, Y. L. Qin, H. W. Zandbergen

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The 1 MHz dielectric properties for mixed-phase polycrystalline ceramics in the system Bi₄Ti₃O₁₂-Bi(In_xSb_1-x)O ₃ were reported. In the vicinity of ambient temperature, the dielectric constants for the Sb and In end-members were approximately 430 and 160, respectively, and the temperature coefficients of dielectric constant (TCKs) were approximately -7600 and +430 ppm/deg. At an overall composition of Bi₄Ti₃O₁₂:Bi(In_0.37Sb_0.63)O₃ a dielectric constant of 144 and a low TCK were found. Powder x-ray diffraction and electron microscopy analyses indicated that the optimal composition contained three major phases. Deviation of any of the elements from the above ratio leads to degradation of the properties.

Original language	English (US)
Pages (from-to)	2672-2676
Number of pages	5
Journal	Journal of Materials Research
Volume	15
Issue number	12
DOIs	https://doi.org/10.1557/JMR.2000.0384
State	Published - Dec 2000
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/JMR.2000.0384

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title = "Bismuth titanium indium antimony oxide: A low-temperature-coefficient, high-K dielectric material",

abstract = "The 1 MHz dielectric properties for mixed-phase polycrystalline ceramics in the system Bi4Ti3O12-Bi(InxSb1-x)O 3 were reported. In the vicinity of ambient temperature, the dielectric constants for the Sb and In end-members were approximately 430 and 160, respectively, and the temperature coefficients of dielectric constant (TCKs) were approximately -7600 and +430 ppm/deg. At an overall composition of Bi4Ti3O12:Bi(In0.37Sb0.63)O3 a dielectric constant of 144 and a low TCK were found. Powder x-ray diffraction and electron microscopy analyses indicated that the optimal composition contained three major phases. Deviation of any of the elements from the above ratio leads to degradation of the properties.",

author = "Cava, {R. J.} and Krajewski, {J. J.} and Qin, {Y. L.} and Zandbergen, {H. W.}",

year = "2000",

month = dec,

doi = "10.1557/JMR.2000.0384",

language = "English (US)",

volume = "15",

pages = "2672--2676",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Materials Research Society",

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TY - JOUR

T1 - Bismuth titanium indium antimony oxide

T2 - A low-temperature-coefficient, high-K dielectric material

AU - Cava, R. J.

AU - Krajewski, J. J.

AU - Qin, Y. L.

AU - Zandbergen, H. W.

PY - 2000/12

Y1 - 2000/12

N2 - The 1 MHz dielectric properties for mixed-phase polycrystalline ceramics in the system Bi4Ti3O12-Bi(InxSb1-x)O 3 were reported. In the vicinity of ambient temperature, the dielectric constants for the Sb and In end-members were approximately 430 and 160, respectively, and the temperature coefficients of dielectric constant (TCKs) were approximately -7600 and +430 ppm/deg. At an overall composition of Bi4Ti3O12:Bi(In0.37Sb0.63)O3 a dielectric constant of 144 and a low TCK were found. Powder x-ray diffraction and electron microscopy analyses indicated that the optimal composition contained three major phases. Deviation of any of the elements from the above ratio leads to degradation of the properties.

AB - The 1 MHz dielectric properties for mixed-phase polycrystalline ceramics in the system Bi4Ti3O12-Bi(InxSb1-x)O 3 were reported. In the vicinity of ambient temperature, the dielectric constants for the Sb and In end-members were approximately 430 and 160, respectively, and the temperature coefficients of dielectric constant (TCKs) were approximately -7600 and +430 ppm/deg. At an overall composition of Bi4Ti3O12:Bi(In0.37Sb0.63)O3 a dielectric constant of 144 and a low TCK were found. Powder x-ray diffraction and electron microscopy analyses indicated that the optimal composition contained three major phases. Deviation of any of the elements from the above ratio leads to degradation of the properties.

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Bismuth titanium indium antimony oxide: A low-temperature-coefficient, high-K dielectric material

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