Bismuth titanium indium antimony oxide: A low-temperature-coefficient, high-K dielectric material

R. J. Cava, J. J. Krajewski, Y. L. Qin, H. W. Zandbergen

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The 1 MHz dielectric properties for mixed-phase polycrystalline ceramics in the system Bi4Ti3O12-Bi(InxSb1-x)O 3 were reported. In the vicinity of ambient temperature, the dielectric constants for the Sb and In end-members were approximately 430 and 160, respectively, and the temperature coefficients of dielectric constant (TCKs) were approximately -7600 and +430 ppm/deg. At an overall composition of Bi4Ti3O12:Bi(In0.37Sb0.63)O3 a dielectric constant of 144 and a low TCK were found. Powder x-ray diffraction and electron microscopy analyses indicated that the optimal composition contained three major phases. Deviation of any of the elements from the above ratio leads to degradation of the properties.

Original languageEnglish (US)
Pages (from-to)2672-2676
Number of pages5
JournalJournal of Materials Research
Volume15
Issue number12
DOIs
StatePublished - Dec 2000
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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