Abstract
Far-infrared magnetospectroscopy has been carried out on shallow donor impurities doped in the central region of GaAs quantum wells in GaAs-AlxGa1-xAs multiple-quantum-well structures. Quantum-well widths between 80 and 450 were investigated. Results are in very good agreement with recent effective-mass calculations for isolated impurities at the center of GaAs quantum wells.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1283-1286 |
| Number of pages | 4 |
| Journal | Physical review letters |
| Volume | 54 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1985 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy