Binding of shallow donor impurities in quantum-well structures

N. C. Jarosik, B. D. McCombe, B. V. Shanabrook, J. Comas, John Ralston, G. Wicks

Research output: Contribution to journalArticlepeer-review

226 Scopus citations


Far-infrared magnetospectroscopy has been carried out on shallow donor impurities doped in the central region of GaAs quantum wells in GaAs-AlxGa1-xAs multiple-quantum-well structures. Quantum-well widths between 80 and 450 were investigated. Results are in very good agreement with recent effective-mass calculations for isolated impurities at the center of GaAs quantum wells.

Original languageEnglish (US)
Pages (from-to)1283-1286
Number of pages4
JournalPhysical review letters
Issue number12
StatePublished - 1985
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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