Binding of shallow donor impurities in quantum-well structures

N. C. Jarosik; B. D. McCombe; B. V. Shanabrook; J. Comas; John Ralston; G. Wicks

doi:10.1103/PhysRevLett.54.1283

Binding of shallow donor impurities in quantum-well structures

N. C. Jarosik, B. D. McCombe, B. V. Shanabrook, J. Comas, John Ralston, G. Wicks

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226 Scopus citations

Abstract

Far-infrared magnetospectroscopy has been carried out on shallow donor impurities doped in the central region of GaAs quantum wells in GaAs-AlxGa1-xAs multiple-quantum-well structures. Quantum-well widths between 80 and 450 were investigated. Results are in very good agreement with recent effective-mass calculations for isolated impurities at the center of GaAs quantum wells.

Original language	English (US)
Pages (from-to)	1283-1286
Number of pages	4
Journal	Physical review letters
Volume	54
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevLett.54.1283
State	Published - 1985
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.54.1283

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title = "Binding of shallow donor impurities in quantum-well structures",

abstract = "Far-infrared magnetospectroscopy has been carried out on shallow donor impurities doped in the central region of GaAs quantum wells in GaAs-AlxGa1-xAs multiple-quantum-well structures. Quantum-well widths between 80 and 450 were investigated. Results are in very good agreement with recent effective-mass calculations for isolated impurities at the center of GaAs quantum wells.",

author = "Jarosik, {N. C.} and McCombe, {B. D.} and Shanabrook, {B. V.} and J. Comas and John Ralston and G. Wicks",

year = "1985",

doi = "10.1103/PhysRevLett.54.1283",

language = "English (US)",

volume = "54",

pages = "1283--1286",

journal = "Physical review letters",

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publisher = "American Physical Society",

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T1 - Binding of shallow donor impurities in quantum-well structures

AU - Jarosik, N. C.

AU - McCombe, B. D.

AU - Shanabrook, B. V.

AU - Comas, J.

AU - Ralston, John

AU - Wicks, G.

PY - 1985

Y1 - 1985

N2 - Far-infrared magnetospectroscopy has been carried out on shallow donor impurities doped in the central region of GaAs quantum wells in GaAs-AlxGa1-xAs multiple-quantum-well structures. Quantum-well widths between 80 and 450 were investigated. Results are in very good agreement with recent effective-mass calculations for isolated impurities at the center of GaAs quantum wells.

AB - Far-infrared magnetospectroscopy has been carried out on shallow donor impurities doped in the central region of GaAs quantum wells in GaAs-AlxGa1-xAs multiple-quantum-well structures. Quantum-well widths between 80 and 450 were investigated. Results are in very good agreement with recent effective-mass calculations for isolated impurities at the center of GaAs quantum wells.

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DO - 10.1103/PhysRevLett.54.1283

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JF - Physical review letters

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Binding of shallow donor impurities in quantum-well structures

Abstract

All Science Journal Classification (ASJC) codes

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