Binding and diffusion of a Si adatom on the Si(100) surface

G. Brocks, P. J. Kelly, R. Car

Research output: Contribution to journalArticle

263 Scopus citations

Abstract

The binding sites for adsorption of a single Si atom on the reconstructed Si(100) surface are identified using first-principles total-energy calculations. We establish several saddle points for the migration of the adatom by mapping out the total energy as a function of its position on the surface. For the diffusion parallel to the dimer rows on the surface, we find an activation energy of 0.6 eV; for diffusion perpendicular to the rows, the activation energy is 1.0 eV. One-dimensional hopping motion of individual adatoms should be observable by scanning tunneling microscopy at moderately low temperatures.

Original languageEnglish (US)
Pages (from-to)1729-1732
Number of pages4
JournalPhysical review letters
Volume66
Issue number13
DOIs
StatePublished - Jan 1 1991
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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