Bilayer WSe2 as a natural platform for interlayer exciton condensates in the strong coupling limit

Qianhui Shi, En Min Shih, Daniel Rhodes, Bumho Kim, Katayun Barmak, Kenji Watanabe, Takashi Taniguchi, Zlatko Papić, Dmitry A. Abanin, James Hone, Cory R. Dean

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

Exciton condensates (ECs) are macroscopic coherent states arising from condensation of electron–hole pairs1. Bilayer heterostructures, consisting of two-dimensional electron and hole layers separated by a tunnel barrier, provide a versatile platform to realize and study ECs2–4. The tunnel barrier suppresses recombination, yielding long-lived excitons5–10. However, this separation also reduces interlayer Coulomb interactions, limiting the exciton binding strength. Here, we report the observation of ECs in naturally occurring 2H-stacked bilayer WSe2. In this system, the intrinsic spin–valley structure suppresses interlayer tunnelling even when the separation is reduced to the atomic limit, providing access to a previously unattainable regime of strong interlayer coupling. Using capacitance spectroscopy, we investigate magneto-ECs, formed when partially filled Landau levels couple between the layers. We find that the strong-coupling ECs show dramatically different behaviour compared with previous reports, including an unanticipated variation of EC robustness with the orbital number, and find evidence for a transition between two types of low-energy charged excitations. Our results provide a demonstration of tuning EC properties by varying the constituent single-particle wavefunctions.

Original languageEnglish (US)
Pages (from-to)577-582
Number of pages6
JournalNature Nanotechnology
Volume17
Issue number6
DOIs
StatePublished - Jun 2022
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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