Bilayer counterflow transport at filling factor 1 in the strong interacting regime

E. Tutuc, M. Shayegan

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We review magneto-transport properties of interacting GaAs bilayer hole systems, with very small inter-layer tunneling, in a geometry where equal currents are passed in opposite directions in the two, independently contacted layers (counterflow). In the quantum Hall state at total bilayer filling ν = 1 both the longitudinal and Hall counterflow resistances tend to vanish in the limit of zero temperature, suggesting the existence of a superfluid transport mode in the counterflow geometry. As the density of the two layers is reduced, making the bilayer more interacting, the counterflow Hall resistivity (ρxy) decreases at a given temperature while the counterflow longitudinal resistivity (ρxx), which is much larger than ρxy, hardly depends on density. Our data suggest that the counterflow dissipation present at any finite temperature is a result of mobile vortices in the superfluid created by the ubiquitous disorder in this system.

Original languageEnglish (US)
Pages (from-to)11-15
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume34
Issue number1-2
DOIs
StatePublished - Aug 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Keywords

  • Bilayer
  • Counterflow
  • Quantum Hall
  • Superfluid

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